3D storage device and its measurement method, thin film measurement device

A storage device, 3D technology, applied in measurement devices, semiconductor/solid-state device testing/measurement, semiconductor devices, etc., can solve the problems of thin film measurement interference, unreasonable calculation results and actual process results, inability to distinguish, etc. Avoid modeling complex effects
CN112786603BActive Publication Date: 2021-12-03YANGTZE MEMORY TECH CO LTD
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Patent Information

Authority / Receiving Office
CN Β· China
Patent Type
Patents(China)
Current Assignee / Owner
YANGTZE MEMORY TECH CO LTD
Publication Date
2021-12-03

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Abstract

The invention discloses a 3D storage device, a measurement method thereof, and a thin film measurement device. A 3D memory device according to an embodiment of the present invention includes a substrate; a stacked structure located above the substrate for forming a memory array; a channel hole disposed on the stacked structure; and a barrier layer disposed on the stacked structure. In the channel hole, it is used to block signals with a wavelength in the first range. The stacked structure includes a first stacked structure located above the substrate and used to form a memory array; a second stacked structure, Located above the first stacked structure for forming a memory array; the channel hole includes: a first channel hole set in the first stacked structure, wherein the barrier layer is set on the in the first channel hole. According to the 3D memory device, its measuring method, and thin film measuring device according to the embodiments of the present invention, it is possible to accurately measure the film thickness of the 3D memory device.
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Description

Technical field

[0001] Technical Field The present invention relates to semiconductor devices and more particularly, to a 3D memory device and a measuring method, a thin film measuring apparatus. Background technique

[0002] As feature sizes become smaller and smaller semiconductor manufacturing process, storage density of the memory device is increasing. To further increase the storage density of a memory device have been developed (i.e., the memory device 3D) three-dimensional structure. 3D memory device comprises a plurality of memory cells stacked along the vertical direction on the wafer per unit area can exponentially increase the degree of integration, and the cost can be reduced.

[0003] To improve the storage device 3D (3D the NAND memory device) bit density, increasing number of stacked layers (e.g. dualdeck), the film thickness is correspondingly increased exponentially. At the same time, the channel hole (channel hole) was changed twice etched from a single etching....

Claims

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