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Acoustic wave device and module

An acoustic wave device and acoustic wave technology, applied in the field of acoustic wave devices and modules, can solve the problems of thermal cycle damage of substrates, reduction of frequency-temperature characteristic improvement, etc.

Active Publication Date: 2017-02-15
TAIYO YUDEN KK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This reduces the degree of improvement in frequency-temperature characteristics
Additionally, the substrate is more easily damaged by thermal cycling

Method used

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  • Acoustic wave device and module
  • Acoustic wave device and module
  • Acoustic wave device and module

Examples

Experimental program
Comparison scheme
Effect test

no. 1 approach

[0041] First embodiment: T1 = 150 μm, T2 = 3 μm

[0042] First comparative example: T1 = 115 μm, T2 = 40 μm

[0043] Chip size: 1.04mm×0.88mm (transmit filter), 1.04mm×0.50mm (receive filter)

[0044] As a result of the temperature cycle test, cracks were formed in the first comparative example, but not in the first embodiment. This is because as the supporting substrate 11 becomes thinner, cracks are more likely to be formed in the supporting substrate 10, and as the piezoelectric substrate 12 becomes thicker, thermal stress from the piezoelectric substrate 12 increases.

[0045] The problem of body waves being reflected by the boundary surface between the support substrate 10 and the piezoelectric substrate 12 occurs when the support substrate 10 and the piezoelectric substrate 12 are made of different materials (with different acoustic impedances) and bonded together at room temperature Only problem. When it is assumed that the reason for the reduction in spurs due to bu...

no. 2 approach

[0054] The second embodiment uses the resonator of the first embodiment for a filter or a duplexer. Figure 6A is a circuit diagram of the ladder filter according to the second embodiment. Such as Figure 6A As shown in , the series resonators S1 to S4 are connected in series between the input terminal In and the output terminal Out. The parallel resonators P1 to P3 are connected in parallel between the input terminal In and the output terminal Out. At least one of the series resonators S1 to S4 and the parallel resonators P1 to P3 may be the resonator of the first embodiment. The number and connection of series resonators and parallel resonators can be properly configured. The multimode filter can employ the resonator of the first embodiment.

[0055] Figure 6B is a block diagram of a multiplexer according to a modification of the second embodiment. Such as Figure 6B As shown in , the transmission filter 80 is connected between the common terminal Ant and the transmi...

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Abstract

An acoustic wave device includes: a support substrate; a piezoelectric substrate bonded on an upper surface of the support substrate at room temperature and made of a different material from the support substrate; a comb-shaped electrode formed on an upper surface of the piezoelectric substrate and exciting an acoustic wave; and an amorphous layer formed between the support substrate and the piezoelectric substrate.

Description

technical field [0001] Certain aspects of the invention relate to acoustic wave devices and modules. Background technique [0002] It is known that a piezoelectric substrate is bonded on a support substrate to improve frequency-temperature characteristics of an acoustic wave device using surface acoustic waves of the piezoelectric substrate. Japanese Patent Application Laid-Open No. 2004-186868 (Patent Document 1) discloses a technique using a lithium tantalate substrate as a piezoelectric substrate and a sapphire substrate as a supporting substrate, when the piezoelectric substrate is bonded to the supporting substrate at room temperature When on the substrate, the thickness of the supporting substrate is three times larger than the thickness of the piezoelectric substrate, and the thickness of the piezoelectric substrate is ten times larger than the wavelength of the surface acoustic wave. Japanese Patent Application Laid-Open No. 2012-105191 (Patent Document 2) discloses...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03H9/02H03H9/64
CPCH03H9/02559H03H9/02834H03H9/6483H03H9/6403H03H9/02574H03H9/02102H03H9/131H03H9/174
Inventor 森谷亮川内治
Owner TAIYO YUDEN KK