Control method and control system for NAND flash memory data in solid state disk

A technology of solid-state hard disk and control method, which is applied in the storage field, can solve the problems of low reliability and performance, high bit error rate of 3D NAND flash memory, etc., and achieve the effect of reducing bit error rate and enhancing data reliability

Inactive Publication Date: 2017-02-22
深圳市先天海量技术有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The present invention aims to solve the technical problem of low reliability and performance caused by the high error rate of 3D NAND flash memor

Method used

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  • Control method and control system for NAND flash memory data in solid state disk
  • Control method and control system for NAND flash memory data in solid state disk
  • Control method and control system for NAND flash memory data in solid state disk

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Embodiment 3D

[0031] In specific implementation, figure 2 It is a schematic flow chart of a control method for 3D NAND flash memory data in an embodiment of the present invention, and the control method includes the following steps:

[0032] Step S100, when performing a data writing operation, first judge whether the data to be written is important data, if yes, then enter step S200, if not, then enter step S300;

[0033] Step S200, control the write operation of data in the Store_Import storage space, and then enter step S300;

[0034] Step S300, control to write data in the Store_Common storage space; and judge whether there is new data written, if yes, repeat the above steps; if not, end the steps.

[0035] Since the current data bus of Nand Flash is 8bit, it can provide a maximum reading speed of 25MB / s and a writing speed of 3MB / s. Obviously, if SSD provides this speed, it is unacceptable to users. At present, SSD controllers generally use multiple channels in parallel. Operate mult...

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Abstract

The invention provides a control method and control system for NAND flash memory data in a solid state disk. Storage space of the solid state disk comprises multiple flash memories, wherein one memory is taken as first storage space, and the rest flash memories are taken as second storage space. The invention is characterized in that the control method comprises the steps that whether to-be-written data is important data is judged, wherein the to-be-written data will be written to a corresponding position in the second storage space if the data is not the important data, and the to-be-written data will be written to a corresponding position in the first storage space and the to-be-written data will be written to the corresponding position in the second storage space if the data is the important data; and whether new to-be-written data exists is judged, wherein the step of judging whether the to-be-written data is the important data will be started if the new to-be-written data exists, and the step will be ended if the new to-be-written data does not exist. The technical scheme provided by the invention has the advantages that a bit error rate of NAND FLASH can be effectively reduced; and data reliability of the storage system can be effectively enhanced.

Description

technical field [0001] The invention relates to the field of storage technology, in particular to a control method and control system for NAND flash memory data in a solid-state hard disk. Background technique [0002] SSD (Solid State Disk) generally refers to a solid-state hard disk composed of NAND flash memory (Flash). Its special feature is that it has no mechanical structure and uses traditional NAND Flash characteristics to read and write functions in the form of block writing and erasing. , so the efficiency of reading and writing is very dependent on the design of reading and writing technology. Compared with the current traditional hard disk, SSD has the advantages of low power consumption, shock resistance, high stability, and low temperature resistance. Since the data on the SSD is stored on the semiconductor memory, it can complete the I / O (input / output) operation on the storage unit at any location in less than one millisecond, so it is the most critical I / O f...

Claims

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Application Information

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IPC IPC(8): G06F11/14
CPCG06F11/1448
Inventor 席爱民
Owner 深圳市先天海量技术有限公司
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