A vertical structure root-enhanced field-effect transistor and its manufacturing method

A field-effect transistor and vertical structure technology, which is applied in the vertical structure GaN-based enhancement field-effect transistor and its manufacturing field, can solve the problems of device surface breakdown reduction, few research reports, breakdown voltage increase, etc., to increase output current , Improving the withstand voltage capability and facilitating packaging
CN106449406BInactive Publication Date: 2020-05-12HUNAN INSTITUTE OF SCIENCE AND TECHNOLOGY
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
HUNAN INSTITUTE OF SCIENCE AND TECHNOLOGY
Publication Date
2020-05-12
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention discloses a vertical-structure GaN-based enhancement mode field effect transistor and a manufacturing method therefor. The device comprises a substrate layer (1), a buffer layer (2), a non-intentionally-doped GaN (i-GaN) epitaxial layer (3), an n type AlGaN epitaxial layer (4), an n type AlN conductive layer (5), an n type AlN oxide isolation layer (6), an i-GaN regrowth layer (7), an AlGaN regrowth layer (8), a gate electrode oxide layer (9), a source electrode (10) arranged on the (8), a drain electrode (11) arranged on the (4), and a gate electrode (12) arranged on the (9). When the device is in use, the drain electrode current, by passing through the non-oxidized n type AlN conductive layer, flows to the source electrode to form the vertically and conductively structured enhancement mode device. The enhancement mode field effect transistor has the advantages of high breakdown voltage, high output current density, low leakage current and the like, and is suitable for the application in the field of the high-power electric power and electronics.
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Description

technical field

[0001] The invention relates to the field of semiconductor devices, in particular to a GaN-based enhancement field-effect transistor with a vertical structure and a manufacturing method thereof. Background technique

[0002] As a representative of the third-generation wide-bandgap semiconductor materials, GaN materials have a wider bandgap (E g ) large, electron saturation drift velocity (v sat ) high, mobility (μ) high, thermal conductivity (k) large, critical electric field (E c ), low dielectric constant (ε), etc., so it is very suitable for making power electronic devices with high temperature resistance, high voltage resistance, high power, low loss, and high density integration.

[0003] For power field effect transistors, it is generally required that the threshold voltage of the device is greater than 3V, that is, it is an enhanced device to ensure the "failure safety" of the circuit. In addition, the use of enhanced devices can effectively simplif...

Claims

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