Color filter based on silicon metasurfaces and nanostructured metal films and applications

A color filter and metal thin film technology, applied in the field of color filters, can solve problems such as strong signal interference, low reflectivity of color filters, poor color purity, etc., to improve quality factor, realize miniaturization, high Effects that enhance color purity and brightness

Active Publication Date: 2017-03-08
青岛志牛智能科技有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the color filters developed based on existing technologies have disadvantages such as low reflectivity, poor color purity, strong signal interference, etc.

Method used

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  • Color filter based on silicon metasurfaces and nanostructured metal films and applications
  • Color filter based on silicon metasurfaces and nanostructured metal films and applications
  • Color filter based on silicon metasurfaces and nanostructured metal films and applications

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Embodiment Construction

[0033] The present invention will be further described below in conjunction with the accompanying drawings and embodiments.

[0034] The structure of the color filter proposed by the invention includes a silicon substrate, a silicon metasurface based on a silicon nano-disc array, and two layers of metal films based on a nano-structure. Wherein, the silicon nanodisk array is grown on a silicon substrate. The first layer of metal thin film is composed of metal nano-disc array, and is located above the silicon nano-disc array. The second metallic film is composed of a nanoporous membrane that sits in the voids between silicon nanodiscs above the silicon substrate.

[0035] Among them, the metasurface is a layer of ultra-thin surface composed of periodic and closely arranged arrays of subwavelength resonators.

[0036] Due to the relatively high refractive index of silicon in the visible spectral range, each silicon nanodisk can act as a nanoresonator capable of generating both ...

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Abstract

The invention discloses a color filter based on silicon metasurfaces and nanostructured metal films and applications. The filter comprises a silicon substrate; the end surface of the silicon substrate is provided with silicon metasurfaces distributed in an array mode; the upper ends of the array-type silicon metasurfaces and the connection gap between the silicon substrate and the array-type silicon metasurfaces are provided with metal films based on nanostructures. As silicon has a relatively-high refractive index in a visible spectrum range, each silicon nano disc is equivalent to a nano resonator, and resonance of electric dipoles and magnetic dipoles caused by Mie scattering can be generated. At the wavelength of resonance, light stored in the silicon nano discs can be effectively coupled to the silicon substrate with the same high refractive index, and thus, reflection of light at the wavelength of resonance can be highly restrained. In the visible spectrum range, the structure which can effectively absorb light of a certain particular wavelength and reflect light of the remaining wavelengths can successfully filter a particularly color.

Description

technical field [0001] The invention relates to a color filter based on a silicon supersurface and a nanostructure metal thin film and its application. Background technique [0002] As an indispensable component, reflective color filters are widely used in display imaging devices, solar cells, color holograms and other fields. Compared with traditional color filters based on toxic dyes, color filters based on nanostructures have the advantages of low cost, more environmental protection, high stability, and can be realized through complementary metal oxide semiconductor processes. [0003] As the most commonly used material in semiconductor processing, silicon is considered to be the most suitable material for developing color filters. At present, the development of reflective color filters based on silicon in the prior art is mainly by fabricating silicon nanowire and silicon nanodisk arrays on a silicon substrate. [0004] Silicon nanowires are typically a few microns lon...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02B5/20G02B5/26
CPCG02B5/201G02B5/26
Inventor 李阳岳文静
Owner 青岛志牛智能科技有限公司
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