Manufacturing method of field effect transistor
A technology of field effect transistors and manufacturing methods, which is applied in the field of semiconductor chip manufacturing, can solve problems such as low reliability, poor performance, and difficulty in adjusting diode parameters separately, and achieve the effect of improving performance and excellent overall performance
Active Publication Date: 2019-08-06
FOUNDER MICROELECTRONICS INT
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Problems solved by technology
[0005] The invention provides a method for manufacturing a field effect transistor, which is used to solve the problems that the parameters of the diode are difficult to be adjusted separately, the performance is poor, and the reliability is low when the Zener diode and the gate polysilicon are produced together in the existing field effect transistor.
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[0055] figure 1 It is a flow chart of the manufacturing method of the field effect transistor provided by the embodiment of the present invention. Such as figure 1 As shown, the manufacturing method of the field effect transistor provided in this embodiment may include:
[0056] S100, forming a first polysilicon region 3 on the surface of the epitaxial substrate 2 on which the gate oxide layer 1 is grown, the first polysilicon region 3 includes a first polysilicon segment 31 and a second polysilicon segment arranged at intervals In the segment 32, the first polysilicon segment 31 is arranged corresponding to the gate region, and the second polysilicon segment 32 is arranged corresponding to the source region.
[0057] Wherein, for an N-type MOSFET, the gate oxide layer in this embodiment is grown on an N-type epitaxial substrate; for a P-type MOSFET, the gate oxide layer in this embodiment is grown on a P-type epitaxial substrate. For the convenience of description, this em...
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Abstract
The invention provides a manufacturing method of a field effect transistor. The method is characterized by carrying out polycrystalline silicon growth on an epitaxial substrate twice and successively and using silicon dioxide to separate grown polycrystalline silicon areas, wherein a first polycrystalline silicon area corresponds to a grid electrode and a source electrode; and a second polycrystalline silicon area corresponds to a Zener diode area. Through separately manufacturing the first polycrystalline silicon area and the second polycrystalline silicon area and individually adjusting respective ion implantation parameters, and separately manufacturing polycrystalline silicon of a Zener diode and grid electrode polycrystalline silicon, a parameter of the Zener diode can be individually adjusted so that performance and reliability of the Zener diode can be increased and a comprehensive property of MOSFET is optimal.
Description
technical field [0001] The invention relates to semiconductor chip manufacturing technology, in particular to a method for manufacturing field effect transistors. Background technique [0002] Metal oxide semiconductor field effect transistor (Metal Oxide Semiconductor Field Effect Transistor, referred to as MOSFET) is a voltage-controlled amplifier device, which is the basic unit of digital integrated circuits. With the development of MOSFET processing technology, the gate oxide layer of the device is getting thinner and thinner, and it is more sensitive to the damage of electrostatic discharge (ESD) phenomenon. [0003] At present, in order to improve the reliability of the MOSFET, an array of back-to-back Zener diodes is generally fabricated between the gate and the source at the same time when the gate polysilicon is fabricated, and its breakdown voltage is higher than the gate operating voltage. When the MOSFET device is working, some diodes are always in the reverse b...
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IPC IPC(8): H01L21/336H01L29/06
CPCH01L29/0684H01L29/66477
Inventor 蔡远飞姜春亮
Owner FOUNDER MICROELECTRONICS INT