Photosensitive detection circuit eliminating the influence of dark current
A photosensitive detection and dark current technology, applied in measurement circuits, photometry, optical radiation measurement, etc., can solve the problems of detection errors, large dark current, influence of detection results, etc., and achieve simple structure, high detection accuracy, and power consumption. small effect
Active Publication Date: 2018-05-25
TIANJIN UNIV
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Problems solved by technology
However, there is a dark current (reverse saturation current) in a reverse-biased diode, and the dark current cannot be directly separated from the photocurrent, so the dark current has a certain impact on the detection results
At the same time, the dark current is related to temperature and is an exponential function of temperature. Therefore, when the temperature is high, the dark current is large and may exceed the photocurrent, which makes the detection error
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[0013] The present invention provides a photosensitive detection circuit that eliminates the influence of dark current. The circuit samples the integrated voltages of the non-photosensitive dark elements and the photosensitive bright elements in the same time and makes a difference, and finally outputs the difference voltage. By subtracting the integrated voltage of the dark element, the influence of the dark current is eliminated, and the detection result is more accurate.
[0014] In order to solve the influence of the dark current of the photodiode on the detection result of the photosensitive detection circuit, the present invention proposes a photosensitive detection circuit that eliminates the influence of the dark current (reverse saturation current). By making the difference between the integrated voltage of the photosensitive bright element and the integrated voltage of the non-sensitive dark element, an integrated voltage that has nothing to do with the dark current is o...
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The present invention relates to the field of photosensitive detection of integrated circuits. The present invention aims to perform detection at the same time by the non-photosensitive dark element and the light-sensitive bright element respectively, and then make a difference between the integral voltages of the two, thereby eliminating the influence of the dark current of the photosensitive diode on the detection result. Improve detection accuracy. The technical solution adopted in the present invention is that the photosensitive detection circuit for eliminating the influence of dark current is composed of four parts: non-photosensitive dark element, light-sensitive bright element, voltage follower, and subtractor; the voltage follower is used to sample non-photosensitive dark element and light-sensitive bright element The output integral voltage of the sample voltage is output to the subtractor; the subtractor is used to make a difference between the integrated voltage of the dark element and the integrated voltage of the bright element to obtain a photosensitive detection output voltage independent of the dark current. The invention is mainly applied to the occasion of photosensitive detection of integrated circuits.
Description
Technical field [0001] The invention relates to the field of integrated circuit photosensitive detection, in particular to a photosensitive detection circuit which eliminates the influence of dark current. Background technique [0002] With the rapid development of CMOS technology, the photosensitive detection technology has attracted more and more attention. Photoelectric detection technology has a wide range of applications in the fields of information security, environmental monitoring, medical electronics, and life sciences. For example, in terms of information security, photosensitive detection technology can be used to detect the integrity of the chip package. When the chip is damaged by an intrusive attack, visible light will illuminate the chip. The photosensitive detection can identify the visible light and then detect that the package is damaged. [0003] At present, the commonly used photosensitive elements in integrated circuits are reverse-biased diodes. When they are...
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IPC IPC(8): G01J1/46
CPCG01J1/46G01J2001/446G01J2001/444H04N25/63H04N25/75
Inventor 赵毅强辛睿山赵公元叶茂李跃辉
Owner TIANJIN UNIV