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Semiconductor device manufacturing method

A device manufacturing method and semiconductor technology, applied in the direction of semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as increased manufacturing costs, complicated processes, and incompatible FinFET processes, so as to reduce difficulty, simplify processes, Easy and effective results

Inactive Publication Date: 2017-03-29
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the conventional etching method for forming nanowires is relatively complicated, and is not very compatible with conventional FinFET processes; at the same time, nanowires need pads for support.
This leads to a more complicated process and increases the production cost

Method used

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  • Semiconductor device manufacturing method
  • Semiconductor device manufacturing method
  • Semiconductor device manufacturing method

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Embodiment Construction

[0024] Hereinafter, the present invention is described by means of specific embodiments shown in the drawings. It should be understood, however, that these descriptions are exemplary only and are not intended to limit the scope of the present invention. Also, in the following description, descriptions of well-known structures and techniques are omitted to avoid unnecessarily obscuring the concept of the present invention.

[0025] The invention provides a method for manufacturing a semiconductor device, and in particular, relates to a method for manufacturing a FinFET device. Hereinafter, referring to the accompanying drawings, the semiconductor device manufacturing method provided by the present invention will be described in detail.

[0026] First, see attached figure 1 A substrate 1 is provided, and an impurity layer 2 is formed on the surface of the substrate 1 . The substrate 1 can be reasonably selected according to the needs of device applications, including but not...

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Abstract

The invention provides a FinFET manufacturing method. The method is characterized by forming a silicon / germanium silicon lamination layer and removing one kind of material therein to form nanowires; since the silicon / germanium silicon lamination layer is included in a fin, the nanowires do not need an extra pad for supporting, thereby reducing process difficulty; due to material property difference between the silicon and germanium silicon, the one kind of material therein can be removed through a high-selection-ratio wet etching process without adopting a dry etching process, thereby further simplifying the process; and since the method is compatible with a conventional FinFET process, a FinFET nanowire device can be obtained conveniently and effectively.

Description

technical field [0001] The present invention relates to the field of semiconductor device manufacturing methods, in particular to a method for manufacturing FinFET semiconductor devices. Background technique [0002] In the past 30 years, semiconductor devices have been proportionally reduced in accordance with Moore's law, the feature size of semiconductor integrated circuits has been continuously reduced, and the integration level has been continuously improved. As the technology node enters the deep sub-micron field, such as within 100nm or even within 45nm, the traditional field effect transistor (FET), that is, planar FET, begins to encounter the limitations of various basic physical laws, making its prospect of scaling down challenged . Many new structure FETs have been developed to meet the actual needs, among which FinFET is a new structure device with great potential for scaling down. [0003] FinFET, Fin Field Effect Transistor, is a multi-gate semiconductor devi...

Claims

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Application Information

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IPC IPC(8): H01L29/78H01L29/267H01L21/336B82Y40/00
CPCH01L29/66795B82Y40/00H01L29/267H01L29/785
Inventor 秦长亮殷华湘赵超
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI