Superconductive nanowire single-photon detector with high polarization extinction ratio

A single-photon detector and superconducting nanowire technology, which is applied in the field of light detection, can solve problems such as low polarization extinction ratio, low absorption efficiency, and influence of absorption efficiency, achieve high absorption efficiency, avoid long-distance focusing, and improve device detection efficiency effect

Active Publication Date: 2017-04-05
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0008] In view of the shortcomings of the prior art described above, the object of the present invention is to provide a superconducting nanowire single photon detector with a high polarization extinction ratio, which is used to solve the p

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  • Superconductive nanowire single-photon detector with high polarization extinction ratio
  • Superconductive nanowire single-photon detector with high polarization extinction ratio
  • Superconductive nanowire single-photon detector with high polarization extinction ratio

Examples

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Example Embodiment

[0049] Example 1

[0050] Such as image 3 As shown, this embodiment provides a superconducting nanowire single-photon detector with high polarization extinction ratio, including:

[0051] Substrate 20;

[0052] The high reflective film 21 is located on the surface of the substrate 20;

[0053] The superconducting nanowire 22 is located on the surface of the high reflective film 21;

[0054] The dielectric layer 23 is located on the surface of the high reflective film 21 and covers the superconducting nanowire 22;

[0055] The grating structure 24, located on the surface of the dielectric layer 23, is suitable for filtering non-target polarized light in the incident light to achieve a higher polarization extinction ratio.

[0056] As an example, the high polarization extinction ratio superconducting nanowire single photon detector of this embodiment is a superconducting nanowire single photon detector with a frontal incident structure.

[0057] As an example, the substrate 20 includes a si...

Example Embodiment

[0067] Example 2

[0068] Such as Figure 4 As shown, this embodiment also provides a high polarization extinction ratio superconducting nanowire single photon detector. In this embodiment, the basic structure of the high polarization extinction ratio superconducting nanowire single photon detector is basically the same as that of Embodiment 1. The difference is that the high reflective film 21 in the first embodiment is alternately stacked SiO 2 The thin film layer 211 and the Si thin film layer 212; and the high reflective film 21 in this embodiment is alternately stacked SiO 2 Thin film layer 211 and TiO 2 膜层213。 Film layer 213. The high reflective film 21 may be the SiO 2 The thin film layer 211 is located on the surface of the substrate 20, and the TiO 2 The thin film layer 213 is located on the SiO 2 Above the film layer 211; it can also be as Figure 4 TiO shown 2 The thin film layer 213 is located on the surface of the substrate 20, and the SiO 2 The thin film layer 211 is...

Example Embodiment

[0069] Example 3

[0070] Such as Figure 5 As shown, this embodiment provides a superconducting nanowire single-photon detector with high polarization extinction ratio. In this embodiment, the basic structure of the superconducting nanowire single-photon detector with high polarization extinction ratio is basically the same as that of Embodiment 1. The difference is that the high reflective film 21 in the first embodiment is alternately stacked SiO 2 The thin film layer 211 and the Si thin film layer 212; and the high reflective film 21 in this embodiment is alternately stacked SiO 2 Thin film layer 211 and Ta 2 O 5 膜层214。 Film layer 214. The high reflective film 21 may be the SiO 2 The thin film layer 211 is located on the surface of the substrate 20, and the Ta 2 O 5 The thin film layer 214 is located on the SiO 2 Above the film layer 211; it can also be as Figure 5 Shown in Ta 2 O 5 The thin film layer 214 is located on the surface of the substrate 20, and the SiO 2 The film ...

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Abstract

The invention provides a superconductive nanowire single-photon detector with a high polarization extinction ratio, and the detector comprises a substrate; a high-reflection film which is located on the surface of the substrate; a superconductive nanowire which is located on the surface of the high-reflection film; a dielectric layer which is located on the surface of the high-reflection film, and wraps the superconductive nanowire; a grating structure which is located on the surface of the dielectric layer. According to the invention, the detector is based on the high-reflection film substrate, can prevent a Fabry-Perot cavity of the substrate from affecting the absorption efficiency in a mode of front optical coupling, and has higher absorption efficiency for a target wavelength. Through the size design of the grating structure, the detector can achieve a function of non-target polarized light filtering, and effectively improves the detection efficiency and polarization extinction ratio of a device.

Description

technical field [0001] The invention belongs to the technical field of light detection, and relates to a superconducting nanowire single photon detector, in particular to a superconducting nanowire single photon detector with high polarization extinction ratio. Background technique [0002] Superconducting Nanowire Single Photon Detector (SNSPD) is a new type of single photon detection device developed in recent years, which can realize high-efficiency single photon detection from visible light to near infrared. Due to its advantages such as high quantum efficiency, low dark count, high detection rate, and low time jitter, SNSPD has been rapidly applied in applications such as quantum information technology, laser communication, satellite-to-earth ranging, bioluminescent detection, and depth imaging. [0003] SNSPD mainly uses low-temperature superconducting ultra-thin film materials, such as NbN, Nb, NbTiN, WSi, etc. The typical thickness is about 5-10nm, and the device us...

Claims

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Application Information

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IPC IPC(8): H01L31/09H01L31/0216H01L31/0232H01L31/0352B82Y40/00
CPCB82Y40/00H01L31/02164H01L31/02327H01L31/035227H01L31/09
Inventor 李浩尤立星王镇
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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