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Superconductive nanowire single-photon detector with high polarization extinction ratio

A single-photon detector and superconducting nanowire technology, which is applied in the field of light detection, can solve problems such as low polarization extinction ratio, low absorption efficiency, and influence of absorption efficiency, achieve high absorption efficiency, avoid long-distance focusing, and improve device detection efficiency effect

Active Publication Date: 2017-04-05
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0008] In view of the shortcomings of the prior art described above, the object of the present invention is to provide a superconducting nanowire single photon detector with a high polarization extinction ratio, which is used to solve the problem of low absorption efficiency of the superconducting nanowire single photon detector in the prior art, The polarization extinction ratio is low, and the influence of the substrate Fabry-Perot cavity on the absorption efficiency, etc.

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  • Superconductive nanowire single-photon detector with high polarization extinction ratio
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  • Superconductive nanowire single-photon detector with high polarization extinction ratio

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Embodiment 1

[0050] Such as image 3As shown, the present embodiment provides a high polarization extinction ratio superconducting nanowire single photon detector, including:

[0051] substrate 20;

[0052] A high reflection film 21 located on the surface of the substrate 20;

[0053] Superconducting nanowires 22, located on the surface of the high reflection film 21;

[0054] a dielectric layer 23, located on the surface of the high reflection film 21, and covering the superconducting nanowire 22;

[0055] The grating structure 24 is located on the surface of the medium layer 23 and is suitable for filtering non-target polarized light in the incident light to achieve a higher polarization extinction ratio.

[0056] As an example, the superconducting nanowire single photon detector with high polarization extinction ratio in this embodiment is a superconducting nanowire single photon detector with a front incident structure.

[0057] As an example, the substrate 20 includes a silicon su...

Embodiment 2

[0068] Such as Figure 4 As shown, this embodiment also provides a high polarization extinction ratio superconducting nanowire single photon detector. The difference is that: the high reflection film 21 in the first embodiment is alternately stacked SiO 2 thin film layer 211 and Si thin film layer 212; and the high reflection film 21 described in this embodiment is alternately stacked SiO 2 Thin film layer 211 with TiO 2 Thin film layer 213 . The high reflection film 21 can be the SiO 2 The thin film layer 211 is located on the surface of the substrate 20, the TiO 2 Thin film layer 213 is located on the SiO 2 Above the thin film layer 211; also can be as Figure 4 As shown in the TiO 2 The thin film layer 213 is located on the surface of the substrate 20, the SiO 2 Thin film layer 211 is located on the TiO 2 above the film layer 213.

Embodiment 3

[0070] Such as Figure 5 As shown, the present embodiment provides a high polarization extinction ratio superconducting nanowire single photon detector. The basic structure of the high polarization extinction ratio superconducting nanowire single photon detector in this embodiment is basically the same as that of Embodiment 1. The difference is that the high reflection film 21 in the first embodiment is alternately stacked SiO 2 thin film layer 211 and Si thin film layer 212; and the high reflection film 21 described in this embodiment is alternately stacked SiO 2 Thin film layer 211 and Ta 2 o 5 film layer 214 . The high reflection film 21 can be the SiO 2 The thin film layer 211 is located on the surface of the substrate 20, the Ta 2 o 5 Thin film layer 214 is located on the SiO 2 Above the thin film layer 211; also can be as Figure 5 Ta 2 o 5 The thin film layer 214 is located on the surface of the substrate 20, the SiO 2 Thin film layer 211 is located on the Ta...

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Abstract

The invention provides a superconductive nanowire single-photon detector with a high polarization extinction ratio, and the detector comprises a substrate; a high-reflection film which is located on the surface of the substrate; a superconductive nanowire which is located on the surface of the high-reflection film; a dielectric layer which is located on the surface of the high-reflection film, and wraps the superconductive nanowire; a grating structure which is located on the surface of the dielectric layer. According to the invention, the detector is based on the high-reflection film substrate, can prevent a Fabry-Perot cavity of the substrate from affecting the absorption efficiency in a mode of front optical coupling, and has higher absorption efficiency for a target wavelength. Through the size design of the grating structure, the detector can achieve a function of non-target polarized light filtering, and effectively improves the detection efficiency and polarization extinction ratio of a device.

Description

technical field [0001] The invention belongs to the technical field of light detection, and relates to a superconducting nanowire single photon detector, in particular to a superconducting nanowire single photon detector with high polarization extinction ratio. Background technique [0002] Superconducting Nanowire Single Photon Detector (SNSPD) is a new type of single photon detection device developed in recent years, which can realize high-efficiency single photon detection from visible light to near infrared. Due to its advantages such as high quantum efficiency, low dark count, high detection rate, and low time jitter, SNSPD has been rapidly applied in applications such as quantum information technology, laser communication, satellite-to-earth ranging, bioluminescent detection, and depth imaging. [0003] SNSPD mainly uses low-temperature superconducting ultra-thin film materials, such as NbN, Nb, NbTiN, WSi, etc. The typical thickness is about 5-10nm, and the device us...

Claims

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Application Information

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IPC IPC(8): H01L31/09H01L31/0216H01L31/0232H01L31/0352B82Y40/00
CPCB82Y40/00H01L31/02164H01L31/02327H01L31/035227H01L31/09
Inventor 李浩尤立星王镇
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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