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Superconducting nanowire single-photon detector with suppressed polarization sensitivity

A single-photon detector and superconducting nanowire technology, which is applied in the field of light detection, can solve the problems of low absorption efficiency, influence of absorption efficiency, and high polarization sensitivity, so as to avoid the influence of absorption efficiency, avoid long-distance focusing, and reduce polarization Correlation Effect

Active Publication Date: 2019-05-10
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0008] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide a superconducting nanowire single photon detector that suppresses polarization sensitivity, which is used to solve the problem of low absorption efficiency of the superconducting nanowire single photon detector in the prior art , high polarization sensitivity, and the influence of the substrate Fabry-Perot cavity on the absorption efficiency, etc.

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  • Superconducting nanowire single-photon detector with suppressed polarization sensitivity
  • Superconducting nanowire single-photon detector with suppressed polarization sensitivity
  • Superconducting nanowire single-photon detector with suppressed polarization sensitivity

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Embodiment 1

[0048] Such as image 3 As shown, the present embodiment provides a superconducting nanowire single photon detector that suppresses polarization sensitivity, including:

[0049] substrate 20;

[0050] A high reflection film 21 located on the surface of the substrate 20;

[0051] Superconducting nanowires 22, located on the surface of the high reflection film 21;

[0052] The dielectric layer 23 is located on the surface of the high reflection film 21 and covers the superconducting nanowires 22, and is suitable for reducing the polarization sensitivity of the superconducting nanowires 22 to light absorption.

[0053] As an example, the superconducting nanowire single photon detector with suppressed polarization sensitivity in this embodiment is a superconducting nanowire single photon detector with a front incident structure.

[0054] As an example, the substrate 20 includes a silicon substrate, an MgO substrate or a sapphire substrate, and the thickness of the substrate 20 is...

Embodiment 2

[0063] Such as Figure 4 As shown, this embodiment also provides a superconducting nanowire single-photon detector that suppresses polarization sensitivity. In this embodiment, the basic structure of the superconducting nanowire single-photon detector that suppresses polarization sensitivity is basically the same as in Embodiment 1. , the difference between the two is that the high reflection film 21 in the first embodiment is alternately stacked SiO 2 thin film layer 211 and Si thin film layer 212; and the high reflection film 21 described in this embodiment is alternately stacked SiO 2 Thin film layer 211 with TiO 2 Thin film layer 213 . The high reflection film 21 can be the SiO 2 The thin film layer 211 is located on the surface of the substrate 20, the TiO 2 Thin film layer 213 is located on the SiO 2 Above the thin film layer 211; also can be as Figure 4 As shown in the TiO 2 The thin film layer 213 is located on the surface of the substrate 20, the SiO 2 Thin f...

Embodiment 3

[0065] Such as Figure 5 As shown, this embodiment provides a superconducting nanowire single-photon detector that suppresses polarization sensitivity. The basic structure of the superconducting nanowire single-photon detector that suppresses polarization sensitivity is basically the same as in Embodiment 1. The difference between the two is that the high reflection film 21 described in the first embodiment is alternately stacked SiO 2 thin film layer 211 and Si thin film layer 212; and the high reflection film 21 described in this embodiment is alternately stacked SiO 2 Thin film layer 211 and Ta 2 o 5 film layer 214 . The high reflection film 21 can be the SiO 2 The thin film layer 211 is located on the surface of the substrate 20, the Ta 2 o 5 Thin film layer 214 is located on the SiO 2 Above the thin film layer 211; also can be as Figure 5 Ta 2 o 5 The thin film layer 214 is located on the surface of the substrate 20, the SiO 2 Thin film layer 211 is located on...

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Abstract

The invention provides a superconducting nanowire single-photon detector that suppresses polarization sensitivity, including: a substrate; a high-reflective film located on the surface of the substrate; a superconducting nanowire located on the surface of the high-reflective film; and a dielectric layer , located on the surface of the high-reflective film and covering the superconducting nanowire. The superconducting nanowire single-photon detector that suppresses polarization sensitivity of the present invention is processed to prepare superconducting nanowires on a high-reflective film. The device structure can directly irradiate light onto the superconducting nanowires through front light coupling, which can avoid optical The problem of long-distance focusing in the cavity structure thus avoids the impact of the substrate Fabry-Perot cavity on the absorption efficiency, and has higher absorption efficiency for the target wavelength, effectively improving the device detection efficiency; at the same time, the present invention suppresses polarization sensitivity High-degree superconducting nanowire single-photon detectors can reduce the polarization dependence of the device by growing a high-refractive index dielectric layer coating the superconducting nanowires on the surface of the high-reflective film.

Description

technical field [0001] The invention belongs to the technical field of light detection, and relates to a superconducting nanowire single photon detector, in particular to a superconducting nanowire single photon detector suppressing polarization sensitivity. Background technique [0002] Superconducting Nanowire Single Photon Detector (SNSPD) is a new type of single photon detection device developed in recent years, which can realize high-efficiency single photon detection from visible light to near infrared. Due to its advantages such as high quantum efficiency, low dark count, high detection rate, and low time jitter, SNSPD has been rapidly applied in applications such as quantum information technology, laser communication, satellite-to-earth ranging, bioluminescent detection, and depth imaging. [0003] SNSPD mainly uses low-temperature superconducting ultra-thin film materials, such as NbN, Nb, NbTiN, WSi, etc. The typical thickness is about 5-10nm, and the device usual...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L39/00H01L39/02H10N60/00H10N60/80
Inventor 李浩尤立星王镇
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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