Method for identifying a short circuit in a first light emitting diode element, and optoelectronic subassembly
Patent Information
- Authority / Receiving Office
- CN ยท China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- OSRAM OLED
- Publication Date
- 2017-04-19
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Abstract
Description
technical field
[0001] The invention relates to a method for detecting a short circuit in a first light-emitting diode element and to an optoelectronic component. Background technique
[0002] The light-emitting optoelectronic component can be, for example, a light-emitting diode (LED) or an organic light-emitting diode (OLED). OLEDs can have an anode and a cathode, the cathode having an organic functional layer system between the anode and the cathode. The organic functional layer system can have: one or more emitter layers, in which electromagnetic radiation is generated; a charge carrier pair generating layer structure, which is respectively composed of Two or more carrier pair generating layers ("charge generating layers", CGLs) for generating carrier pairs; and one or more electron blocking layers, also known as hole a "hole transport layer" (HTL); and one or more hole-blocking layers, also known as "electron transport layers" (ETL), in order to rectify (richten) the ...