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Method for monitoring abnormality of photolithography machine imaging plane

An imaging plane and lithography machine technology, applied in microlithography exposure equipment, photolithography process exposure devices, etc., can solve problems such as affecting product output, reduce time consumption, avoid losses, and increase the frequency of monitoring. Effect

Active Publication Date: 2017-04-26
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

Therefore, if the frequency of monitoring is to be strengthened, it will inevitably affect the output of the product

Method used

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  • Method for monitoring abnormality of photolithography machine imaging plane
  • Method for monitoring abnormality of photolithography machine imaging plane
  • Method for monitoring abnormality of photolithography machine imaging plane

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Embodiment Construction

[0020] In the following description, numerous specific details are given in order to provide a more thorough understanding of the present invention. It will be apparent, however, to one skilled in the art that the present invention may be practiced without one or more of these details. In other examples, some technical features known in the art are not described in order to avoid confusion with the present invention.

[0021] It should be understood that the invention can be embodied in different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art.

[0022] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the singular forms "a", "an" and "the / the" are intended to include...

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Abstract

The present invention provides a method for monitoring the abnormality of a photolithography machine imaging plane. The method comprises: placing a monitoring pattern on a mask, wherein the process window of the monitoring pattern is smaller than the process window of the product circuit pattern on the mask; exposing the pattern on the mask; and performing defect scanning on the pattern formed after the exposing so as to determine whether the photolithography machine imaging plane is abnormal based on the presence or absence of the specific distribution of the defect scanning result. According to the present invention, with the method, the production stopping of the machine is not required so as to improve the monitoring efficiency and reduce the time consumed by the monitoring, and the problem can be timely found at the early stage of the generation of the abnormality of the photolithography machine imaging plane so as to avoid the yield loss.

Description

technical field [0001] The invention relates to the technical field of semiconductor photolithography technology, in particular to a method for monitoring the abnormality of the imaging plane of a photolithography machine. Background technique [0002] With the rapid development of the integrated circuit manufacturing industry, the lithographic imaging technology continues to improve, and the feature size of the chip is also continuously reduced, which has higher requirements for overlay accuracy. Overlay accuracy is one of the important performance indicators of modern high-precision step-and-scan projection lithography machines, and it is also an important part of new lithography technology that needs to be considered. Overlay accuracy will seriously affect product yield and performance. Improving the overlay accuracy of the lithography machine is also the key to determining the minimum unit size. [0003] The overlay accuracy is generally restricted by factors such as t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/20
Inventor 邢滨张强郝静安
Owner SEMICON MFG INT (SHANGHAI) CORP
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