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High-temperature oxide-film thermoelectric module

A technology of oxide film and high-temperature oxide, which is applied in the direction of thermoelectric device junction lead-out materials, thermoelectric devices that only use Peltier or Seebeck effect, etc., can solve the problems of high electrode cost and low power density, and reduce the amount of electrodes used , The effect of increasing the output power density and improving the integration of modules

Inactive Publication Date: 2017-04-26
KUNMING UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The technical problem to be solved by the present invention is: the existing π-type thin film thermoelectric module has low power density and high electrode cost

Method used

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Embodiment 1

[0022] A high-temperature oxide thin film thermoelectric module, see attached Figure 4 , including two sets of thermoelectric pairs 1, the thermoelectric pairs are composed of a P-type oxide film 11 and an N-type oxide film 12, and the P-type oxide film 11 and the N-type oxide film 12 are respectively grown on double-sided polished single crystal substrates 2, the P-type oxide film 11 and the N-type oxide film 12 are distributed in an X shape with an angle of 90°; the gold electrode 3 is located on the side of the single crystal substrate, and the P-type oxide film 11 and the The N-type oxide films 12 are sequentially connected by the gold electrodes 3 to form two series paths.

[0023] In this embodiment, the P-type oxide film 11 and the N-type oxide film 12 are respectively selected from P-Ca 3 co 4 o 9 and N- ZnO thin film; double-sided polished single crystal substrate chooses Al 2 o 3 (0001), length×width×thickness=10mm×5mm×0.1mm, surface polishing grade Ra=15 Å.

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Embodiment 2

[0026] A high-temperature oxide thin film thermoelectric module, see attached figure 2 , 3 , including five sets of thermoelectric pairs 1, the thermoelectric pairs are composed of a P-type oxide film 11 and an N-type oxide film 12, and the P-type oxide film 11 and the N-type oxide film 12 are respectively grown on a double-sided polished single crystal substrate 2, the P-type oxide film 11 and the N-type oxide film 12 are distributed in an X shape with an included angle of 60°; the gold electrode 3 is located on the side of the single crystal substrate, and the P-type oxide film 11 and the The N-type oxide films 12 are sequentially connected by the gold electrodes 3 to form two series paths.

[0027] In this embodiment, the P-type oxide film 11 and the N-type oxide film 12 are respectively selected from P-Ca x CoO 2 and N-CaMnO 3 Thin film; double-sided polished single crystal substrate chooses LaAlO 3 (100), length×width×thickness=30mm×10mm×0.5mm, surface polishing gra...

Embodiment 3

[0030] A high-temperature oxide thin film thermoelectric module, see attached figure 2 , 3 , including five sets of thermoelectric pairs 1, the thermoelectric pairs are composed of a P-type oxide film 11 and an N-type oxide film 12, and the P-type oxide film 11 and the N-type oxide film 12 are respectively grown on a double-sided polished single crystal substrate 2, the P-type oxide film 11 and the N-type oxide film 12 are distributed in an X shape with an angle of 10°; the gold electrode 3 is located on the side of the single crystal substrate, and the P-type oxide film 11 and the The N-type oxide films 12 are sequentially connected by the gold electrodes 3 to form two series paths.

[0031] In this embodiment, the P-type oxide film 11 and the N-type oxide film 12 are respectively selected from P-CuCrO 2 and N-In 2 o 3 Thin film; double-sided polished single crystal substrate selection (La x Sr 1-x )(Al y Ta 1-y )O 3 (100), length×width×thickness=50mm×20mm×0.1mm, su...

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Abstract

The invention discloses a high-temperature oxide-film thermoelectric module which belongs to the functional film material and appliance field, and is characterized by comprising: at least a group of thermoelectric pairs. The thermoelectric pairs consist of P type oxide films and N type oxide films wherein the P type oxide films and the N type oxide films grow on the upper surface and the lower surface of a double-sided polished monocrystalline substrate respectively; the P type oxide films and the N type oxide films are distributed in an X shaped intersecting manner. The P type oxide films and the N type oxide films are connected sequentially through electrodes to form two series-connection channels. Compared with the existing pai type film thermoelectric module, the output power density per unit area of the invention is improved significantly; and the gold amount used for electrodes is reduced considerably; and the cost is also cut.

Description

technical field [0001] The invention discloses a high-temperature oxide thin film thermoelectric module, which belongs to the field of functional thin film materials and devices. Background technique [0002] Compared with traditional alloy thermoelectric materials, oxide-based thermoelectric materials have the advantages of stable high-temperature performance, oxidation resistance and non-toxicity, and have attracted extensive attention. Oxide thin-film thermoelectric modules have also become the focus of emerging research. [0003] However, the oxide thin-film thermoelectric module gradually developed and evolved on the basis of bulk thermoelectric modules has a module structure that does not deviate from the traditional π-type module configuration, that is, P and N-type oxide films are parallel and alternate on the same surface of the substrate. arranged and connected in series by gold electrodes, as attached figure 1 shown. Although the π-type thin-film thermoelectric ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L35/32H01L35/22H10N10/17H10N10/855
CPCH10N10/855H10N10/17
Inventor 虞澜宋世金邱兴煌谈文鹏刘丹丹刘安安胡建力
Owner KUNMING UNIV OF SCI & TECH