Novel wide beam decelerator

Abstract

The invention discloses a novel wide beam decelerator, which includes a decelerating electrode (1), two suppressing electrodes 1 (2), two ground electrodes 1 (3), two suppressing electrodes 2 (4), two ground electrodes 2 (5), two focusing electrodes (6) and two ground electrodes 3 (7). Ions enter through the decelerating electrode (1) into the decelerator, a potential difference between the decelerating electrode (1) and the suppressing electrodes 1 (2) produces an accelerating electric field which accelerates the ions, meanwhile, a potential difference between the focusing electrodes (6) and the suppressing electrodes 1 (2) forms a horizontal electric field, and the direction of the electric field enables the ions to move inward to achieve the ion focusing in the horizontal direction. Afterwards, the two suppressing electrodes 2 (4), the two ground electrodes 1 (3) and the two ground electrodes 2 (5) constitute a lens, according to the lens principle, when passing through the lens, the ions first focus and then diverge, and the ions achieve the purposes of both deceleration and focusing after passing through the decelerator. The novel wide beam decelerator of the invention has a better wide beam vertical focusing effect as compared with a conventional apparatus, the number of sparking is reduced, and the requirements of wideband beam can be well met.

Description

technical field [0001] The invention relates to a novel broadband beam reducer, mainly relates to an ion implanter and belongs to the field of semiconductor manufacturing. Background technique [0002] With the development of semiconductor technology, and with the reduction of characteristic line width and the increase of process complexity, the uniformity and stability of beam current are becoming more and more important for ion implantation systems, and have become an important key to the success or failure of devices. When the energy of the low-energy broadband ion implanter is very low and the beam current is very large, the ion beam diverges seriously due to the space charge effect, making it more difficult to adjust the uniformity of the beam level. Therefore, how to design an appropriate ion optical system and broadband Beam uniformity adjustment device; to ensure the uniformity and stability of ion beam current is the key to the success of wide beam ion implanter equ...

AI Technical Summary

Problems solved by technology

[0004] In order to solve the problem of broadband beam divergence and sparking, the present invention integrates the successful experience and technical advantages of developing semiconductor ion implanters, and designs a wide beam reducer device on the basis of ion optical system

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