Device characteristic aging adaptive control method and device
Patent Information
- Authority / Receiving Office
- CN Β· China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- INST OF MICROELECTRONICS CHINESE ACAD OF SCI
- Publication Date
- 2019-12-10
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Abstract
Description
technical field
[0001] The invention relates to the field of circuit design, in particular to a device aging characteristic self-adaptive control method and device. Background technique
[0002] During the long-term working process of MOS integrated circuits, MOSFET device hot carrier injection (HCI), substrate positive bias instability (PBTI), and negative bias instability (NBTI) will obviously lead to the drift of MOSFET threshold voltage. It further causes the change of the current-voltage curve, which is manifested as the change of the charge and discharge current on the circuit, and the circuit performance is degraded under the same working voltage. Therefore, effects such as HCI, PBTI, and NBTI will cause device characteristics to deviate from the normal operating range and shorten the working life of integrated circuit chips. Such a process is called device characteristic aging. With the development of manufacturing processing technology, the feature size has been co...