Polishing slurry composition
A composition and polishing slurry technology, applied in polishing compositions containing abrasives, other chemical processes, electrical components, etc., can solve the problems of unstable component operation, unimproved, reduced semiconductor yield, etc., to improve the yield. rate, improve metal short circuit, reduce erosion effect
Active Publication Date: 2017-05-10
K C TECH +1
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- Application Information
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Problems solved by technology
The slurry composition that does not improve the morphology leads to over etch or unetch of tungsten in the post-polishing process, resulting in process defects or unstable operation of the device, thus greatly reducing the semiconductor yield
Method used
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Examples
Experimental program
Comparison scheme
Effect test
Embodiment
[0080] A polishing slurry composition for improving the morphology of tungsten at pH 2.5 was prepared by mixing 3.5% by weight of silica and 0.5% by weight of hydrogen peroxide, and adjusting the pH using nitric acid.
Embodiment 1
[0101] A polishing slurry composition was prepared under the same conditions as in Comparative Example 1, except that two kinds of abrasive grains were mixed at a ratio of 50% of the first silica abrasive grains and 50% of the second silica abrasive grains.
Embodiment 2
[0103] A polishing slurry composition was prepared under the same conditions as in Comparative Example 1, except that two kinds of abrasive grains were mixed at a ratio of 50% of the first silica abrasive grain and 50% of the third silica abrasive grain.
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Abstract
The present invention relates to a polishing slurry composition. A polishing slurry composition according to a first aspect of the present invention comprises abrasive particles and an oxidant, polishes tungsten having a thickness of 10-1,000 , and improves the topography of tungsten. Additionally, the polishing slurry composition according to a second aspect of the present invention comprises: at least two abrasive particles among first abrasive particles, second abrasive particles and third abrasive particles; and an oxidant, wherein the primary particle size of the first abrasive particles is 20 nm or more and less than 45 nm, the primary particle size of the second abrasive particles is 45 nm or more and less than 130 nm, and the primary particle size of the third abrasive particles is 130 nm or more and less than 250 nm.
Description
technical field [0001] The present invention relates to polishing slurry compositions. Background technique [0002] As design rules for products are reduced, structures have narrower widths and greater heights, so the aspect ratio (depth / bottom width) has increased significantly. More than double the impact in 30nm-scale semiconductor processes. Therefore, not only scratches but also topography have a sensitive influence on the surface of the membrane material. The key factors considered in the polishing process are the amount of polishing and the quality of the polished surface. In recent years, the importance of the quality of the polished surface has been maximized with the reduction of semiconductor design rules. Therefore, there is a polishing process for the quality of the polished surface. the trend of. [0003] On the other hand, as the degree of integration of semiconductors has increased in recent years, lower current leakage has been demanded, and high-dielect...
Claims
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IPC IPC(8): C09K3/14H01L21/304
CPCC09G1/02C09K3/1463H01L21/3212H01L29/66545C09K3/1409H01L21/28079
Inventor 尹柱炯洪承哲尹永镐白云揆徐智训金起廷李康天
Owner K C TECH
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