37results about How to "Reduce dishing" patented technology

A method of reducing the pattern effect in the CMP process. The method comprises the steps of providing a semiconductor substrate having a patterned dielectric layer, a barrier layer on the patterned dielectric layer, and a conductive layer on the barrier layer; performing a first CMP process to remove part of the conductive layer before the barrier layer is polished, thereby a step height of the conductive layer is reduced; depositing a layer of material substantially the same as the conductive layer on the conductive layer; and performing a second CMP process to expose the dielectric layer. A method of eliminating the dishing phenomena after a CMP process and a CMP rework method are also provided.

The present invention relates to a polishing slurry composition. A polishing slurry composition according to a first aspect of the present invention comprises abrasive particles and an oxidant, polishes tungsten having a thickness of 10-1,000 , and improves the topography of tungsten. Additionally, the polishing slurry composition according to a second aspect of the present invention comprises: at least two abrasive particles among first abrasive particles, second abrasive particles and third abrasive particles; and an oxidant, wherein the primary particle size of the first abrasive particles is 20 nm or more and less than 45 nm, the primary particle size of the second abrasive particles is 45 nm or more and less than 130 nm, and the primary particle size of the third abrasive particles is 130 nm or more and less than 250 nm.

The present invention provides an alignment mark, the alignment mark includes at least one dummy mark pattern in a first layer comprises a plurality of dummy mark units arranged along a first direction, and at least one first mark pattern located in a second layer disposed above the first layer, the first mark pattern comprises a plurality of first mark units, each of the first mark units being arranged in a first direction. When viewed in a top view, the first mark pattern completely covers the dummy mark pattern, and the size of each dummy mark unit is smaller than each first mark unit. In addition, each dummy mark unit of the dummy mark pattern has a first width, each first mark unit of the first mark pattern has a second width, and the first width is smaller than half of the second width.

A grinding member is composed of a grinding disk, a grinding liner on said grinding disk and a grinding pad on said grinding liner. It features that said grinding liner has one concave-convex surface.

The invention relates to the field of vertical lathes, in particular to a multi-column multi-tool high-efficiency composite machining center, comprising a beam, a column and a worktable, and a column lifting assembly is arranged between the beam and the column, and is characterized in that the column is 4-8 They are evenly arranged on the periphery of the worktable in the form of extremely symmetrical distribution; the worktable is provided with a central column in the center, and a central beam sleeve is arranged on the central column, and the central beam sleeve is connected with the lifting assembly of the central column. The flange is connected to the center beam sleeve, the lifting and lowering of the beam, the lifting and lowering of the boring and milling head on the beam, the horizontal movement of the boring and milling head and the turning tool holder, the column retraction operation of the column, and the rotation of the worktable are controlled by the numerical control system respectively. . Compared with the prior art, the beneficial effects of the present invention are as follows: equipped with different tools and accessories, it can realize five functions of gantry boring and milling, gear milling machine, radial drill, vertical turning and floor boring and milling, and becomes an efficient and multifunctional machine. The compound vertical lathe doubles the processing efficiency.

The present invention relates to a semiconductor device bonding structure and a bonding method thereof. The bonding structure includes: a first metal layer, the surface of the first metal layer has a first pad, and the first pad has a first Opening pattern; second metal layer, the surface of the second metal layer has a second welding pad, and the second welding pad has a second opening pattern; the surface of the first metal layer and the second metal layer are bonded and connected , the first pad and the corresponding second pad are aligned up and down for bonding connection, the first opening pattern of the first pad and the second opening pattern of the second pad are mutually bonded on the bonding contact surface stagger.

A hole layout for reducing dishing of metal plugs, comprising a substrate and an insulating layer, wherein the insulating layer is on the substrate, and a hole for filling metal is provided in the insulating layer, and the hole is Having a profile in the horizontal plane defined by a closed boundary and a reduced critical portion within said boundary for reducing dishing of said metal plug. The hole layout for reducing metal plug dishing of the present invention has the advantages of reducing the dishing phenomenon of metal plugs filled in the holes, reducing the risk of the manufacturing process, increasing the freedom of photomask layout and reducing the chip area.

The present invention relates to the technical field of civil engineering, and aims to provide a prefabricated underground diaphragm wall and its construction method. The key point of the technical solution is to set up an installation channel on the ground, and several diaphragm wall units are sequentially placed in the installation channel , a telescopic assembly is sandwiched between two adjacent continuous wall units. The telescopic assembly includes two mounting plates and a telescopic rubber strip. The telescopic rubber strip is sandwiched between two mounting plates. The panels are attached to the opposite side walls of the two continuous wall units respectively. In the present invention, the telescopic rubber strips can adapt to the effect of thermal expansion and contraction between the continuous wall units, thereby reducing the possibility of bulge or depression between the continuous wall units.

The invention discloses a grinding composite for planarization metal layer. The grinding composite at least comprises 7,500ppm to less than 5,000ppm by weight of gridding granules, hydrogen peroxide, accelerator, co-corrosion inhibitor and water, wherein the co-corrosion inhibitor comprises a first corrosion inhibitor and a second corrosion inhibitor, and the co-corrosion inhibitor is applied to the planarization metal layer. The composite is capable of maintaining a high grinding removing rate for the metal layer and inhibiting metallic etching; moreover, the composite is capable of reducing gridding deficiencies including dish down, abrasion and the like.