37results about How to "Reduce dishing" patented technology

A method of reducing the pattern effect in the CMP process. The method comprises the steps of providing a semiconductor substrate having a patterned dielectric layer, a barrier layer on the patterned dielectric layer, and a conductive layer on the barrier layer; performing a first CMP process to remove part of the conductive layer before the barrier layer is polished, thereby a step height of the conductive layer is reduced; depositing a layer of material substantially the same as the conductive layer on the conductive layer; and performing a second CMP process to expose the dielectric layer. A method of eliminating the dishing phenomena after a CMP process and a CMP rework method are also provided.

The invention discloses a grinding composite for planarization metal layer. The grinding composite at least comprises 7,500ppm to less than 5,000ppm by weight of gridding granules, hydrogen peroxide, accelerator, co-corrosion inhibitor and water, wherein the co-corrosion inhibitor comprises a first corrosion inhibitor and a second corrosion inhibitor, and the co-corrosion inhibitor is applied to the planarization metal layer. The composite is capable of maintaining a high grinding removing rate for the metal layer and inhibiting metallic etching; moreover, the composite is capable of reducing gridding deficiencies including dish down, abrasion and the like.

The present invention relates to a CMP slurry that is able to reduce dishing generation, when it is applied to polishing or planarization of silicon oxide layer, for example, and a polishing method.

The CMP slurry includes a polishing abrasive, a linear anionic polymer, a compound including a phosphoric acid group, and water, and the ratio of CMP polishing speed to a silicon oxide layer: CMP polishing speed to a silicon nitride layer is 30:1 to 50:1.

The invention relates to a chemical mechanical polishing composition, in particular to an inhibitor composition which at least contains an imidazoline compound or a triazole compound or a composition of the imidazoline compound and the triazole compound, sarcosine and a salt compound thereof or a composition of the sarcosine and the salt compound thereof. The inhibitor composition is applied to chemical mechanical polishing, can maintain the high polishing removal rate of a metal layer, has the characteristic of metal etching inhibition and can reduce the polishing defects of dish down, ablation, and the like.

The invention provides a method for adding redundancy patterns to a photoetching map. The method comprises the steps that S1 the photoetching map containing multiple design patterns is provided, and the photoetching map is divided into at least two areas; S2 the total area, the total perimeter and the region area of the design pattern in each area are obtained; S3 the ratio of the total area and the region area of the design pattern in each area is obtained through calculation; S4 all areas with the correlative value within(A,1)are not filled with the redundancy patterns, all areas with the correlative value smaller than A are filled according to the principle that the smaller the total perimeter is, the larger the filled redundancy pattern is, and the ratio of the total area of the design pattern and the corresponding redundancy pattern in any area and the region area of the area is within(A,1), and the value range of A is within (0,1). The method enables the surface density distribution of a wafer to be more even, and a chemical mechanical grinding effect is improved.

This invention provides a reducing conductance structure dishing and erosion method in chemical mechanical grinding containing at least a dielectric layer with at least a dielectric window hole; forming a barrier layer on dielectric layer and the window hole; forming a conductive layer such as a copper layer on the barrier layer to fill in the dielectric window hole to form a conductive structure and removing part of conductive layer to expose part of the barrier layer to be polished as well as the conductive structure. With a reacted reagent so as to form a metal compound on the conductive structure prevented from dishing or erosion.

The invention relates to the technical field of civil engineering and aims at providing a fabricated underground continuous wall and a construction method thereof. The technical scheme of the construction method of the fabricated underground continuous wall is characterized by comprising forming a mounting ditch in the ground, sequentially mounting a plurality of continuous wall units inside the mounting ditch, and clamping extension modules between every two neighboring continuous wall units, wherein every extension module comprises two mounting plates and an extension rubber strip, the extension rubber strip is clamped between the two mounting plates, and the two mounting plates are attached onto the opposite side walls of the corresponding two continuous wall units. According to the construction method of the fabricated underground continuous wall, the extension rubber strips can adapt to thermal expansion and contraction between the continuous wall units to reduce upheaval and depression between the continuous wall units.

The invention relates to a coating liquid used before evaporation of CPP and PET matrixes and a preparation process of the coating liquid; the coating liquid mainly comprises bifunctional acrylate, along-chain dithiol compound, a photoinitiator, silane coupling agent pretreated nanoparticles, other auxiliaries and a solvent. wherein the molar ratio of double bonds to thiol groups in the bifunctional acrylate and the long-chain dithiol compound is controlled in a range of 1: 1.1-1: 1.5, and after ultraviolet and visible light irradiation, a priming coat is formed on the surface of the matrix.In the evaporation process of the surface of the base coating, the flexible long-chain sulfydryl chemically bonded in the acrylate coating can be bonded with inorganic metal or nonmetal of an evaporation layer to form -S (M-S) or metal O-S (M-O-S), wherein M represents the chemical bond of the inorganic metal or nonmetal of an evaporation film layer, and the bonding strength of the coating and thematrix is improved; and the adhesive force of the inorganic coating is improved, so that a more excellent barrier property is obtained.

The disclosure relates to chemical mechanical planarization (CMP) polishing compositions including proline and a fluorochemical surfactant. The wafer polishing composition may be used as a solution substantially free of abrasive particles, the composition of which can be adjusted to control Oxide Removal Rate and oxide over nitride Selectivity Ratio in Shallow Trench Isolation (STI) processing ofsemiconductor wafers using a fixed abrasive CMP process. In certain embodiments, the disclosure provides a working liquid for fixed abrasive CMP including proline and a fluorochemical surfactant at apH from 9 to 11. When used in a fixed abrasive CMP system and method for STI, exemplary working liquids may yield an Oxide Removal Rate of at least 500 angstroms per minute, and an oxide over nitrideSelectivity Ratio of at least 5.

An aqueous chemical mechanical polishing (CMP) agent (A) comprising solid particles (a1) containing (a11) a corrosion inhibitor for metals, and (a12) a solid material, the said solid particles (a1) being finely dispersed in the aqueous phase; and its use in a process for removing a bulk material layer from the surface of a substrate and planarizing the exposed surface by chemical mechanical polishing until all material residuals are removed from the exposed surface, wherein the CMP agent exhibits at the end of the chemical mechanical polishing, without the addition of supplementary materials, —the same or essentially the same static etch rate (SER) as at its start and a lower material removal rate (MRR) than at its start, —a lower SER than at its start and the same or essentially the same MRR as at its start or—a lower SER and a lower MRR than at its start; such that the CMP agent exhibits a soft landing behavior.

A method of forming a trench isolation device capable of reducing corner recess comprising forming a pad oxide layer and a silicon nitride mask layer on a semiconductor base, and forming a trench by etching. Next, a liner oxide layer is formed on the semiconductor base and on the surface of the shallow trench. Then, the silicon nitride mask layer will be etched to reveal the corner. Finally, a layer of oxide is formed on the base to fill up the trench so that the trench isolation device can be completed. The present invention is designed to solve the corner recess problem, reduce generation of kick effect, and enhance the device characteristics and electrical quality.

The invention provides gentle twisting type automobile door pit overhauling equipment. The gentle twisting type automobile door pit overhauling equipment comprises a traction tensile force bridge and outer threads, wherein a threaded hole is formed in the center of the top of the traction tensile force bridge; disc-shaped bottoms on two sides of the traction tensile force bridge are fixedly connected with electromagnetic suckers separately; the tail end of a cylindrical rod is rotatably connected with a second cylinder through a bearing; and the bottom of the second cylinder is fixedly connected with the top of a disc. The traction tensile force bridge is fixed on an automobile end surface at the position of a recessed edge of an automobile through the electromagnetic suckers, then a rotating knob twists to drive the cylindrical rod to ascend together, rotation of the cylindrical rod is converted into linear movement through a bearing, therefore, a rubber mat which is in adhesion connection with an automobile pit is slowly and uniformly driven to ascend, and the position of a concave surface of the automobile is driven to recover.

An apparatus disclosed herein relates to a pressure vessel cover comprising, a periphery of the cover, a first surface of the periphery for sealing on a first side of the cover and a second surface on a second side of the cover opposite from the first side, a third surface on the first side of the cover and located radially inwardly from the periphery, the third surface being displaced axially from the first surface in the direction of the second surface, a fourth surface on the second side of the cover radially inwardly positioned from the periphery, and a bore through the cover in fluidic communication with the third surface and the fourth surface.

The invention discloses a manufacturing method of an interlayer film. The method comprises the following steps of step1, providing a semiconductor substrate forming a pattern structure; step2, using afirst insulating layer which has a high filling ability and is formed through a first growth technology to fill a pattern interval region and extending the first insulating layer to an outer portionof the pattern interval region, and forming a closed cavity while filling; step3, taking a pattern structure as an end point of grinding to carry out first chemical mechanical grinding, forming a dishing defect in a pattern structure region and at the same time, opening a cavity; step4, forming a second insulating layer by using a second growth technology, using the second insulating layer to completely fill the cavity, wherein hardness of the second insulating layer is higher than the hardness of the first insulating layer; and step5, taking the pattern structure as the end point of grindingto carry out second chemical mechanical grinding, and eliminating the dishing defect by using a characteristic that the hardness of the second insulating layer is increased. In the invention, the cavity formed through filling an interlayer film in the pattern interval region can be eliminated, and the dishing defect on an interlayer film surface of a top of the pattern interval region can be reduced or eliminated.

When oxide layer locating out of shallow-trench is removed, complex number of arrayed oxide columns and oxide holes are formed on oxide layer on active region in order to acquire optimal polishing speed balance point when CMP crafts is made for semiconductor substrate with larger active region and higher density.

The invention relates to a Faraday disk, an ion migration tube and an ion mobility spectrometer. The Faraday disk comprises a mounting ring and an ion receiving electrode which are located in the sameplane, the mounting ring is suitable for being connected with the inner wall of a migration tube, connecting pieces are arranged between the ion receiving electrode and the mounting ring, and an avoidance space allowing the connecting pieces to deform is formed between the adjacent connecting pieces; under the action of high temperature, the mounting ring is heated to expand to apply first bias pressure towards the center of the mounting ring to the connecting pieces, the ion receiving electrode is heated to expand to apply second bias pressure away from the center of the mounting ring to theconnecting pieces, the first bias pressure and the second bias pressure are opposite in action direction and act on the connecting pieces at the same time, the connecting pieces are bent and deformed, stress is more uniform, deformation consistency of the multiple connecting pieces is better facilitated, the ion receiving electrode can rotate in the circumferential direction more easily, then thephenomenon that the surface of the ion receiving electrode protrudes or sinks is reduced, and the influence on an electric field between the ion receiving electrode and a front electrode is smaller.