Semiconductor device bonding structure and bonding method

Abstract

The invention discloses a semiconductor device bonding structure and a bonding method. The bonding structure comprises a first metal layer and a second metal layer; the surface of the first metal layer is provided with a first welding pad which has a first opening pattern; the surface of the second metal layer is provided with a second welding pad which has a second opening pattern; the surfaces of the first metal layer and the second metal layer are connected by bonding; the first wielding pad and the second welding pad are bonded in a vertical alignment manner; and the first opening pattern of the first bonding pad and the second opening pattern of the second bonding pad are mutually staggered on the bonding contact surface.

Description

technical field [0001] The invention relates to the field of semiconductor device bonding, in particular to a semiconductor device bonding structure and a bonding method thereof. Background technique [0002] In the semiconductor circuit manufacturing process and in the later packaging process, different devices need to be bonded, and pads of different semiconductor devices are bonded to achieve the purpose of electrical connection. [0003] The quality of the bonding is mainly determined by the flatness of the pad itself and the contact level between the pads. In the existing bonding process, the surface of the pad is prone to unevenness, which leads to poor contact between the pads, which makes different The connection between semiconductor devices is not good, causing undesirable consequences such as circuit failure. [0004] Specifically, the traditional bonding using the DBI method (DirectBondInterconnect, DBI) is completed by applying pressure and temperature between ...

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Problems solved by technology

[0003] The quality of the bonding is mainly determined by the flatness of the pad itself and the contact level between the pads. In the existing bonding process, the surface of the pad is prone to unevenness, which leads to poor contact between the pads, which makes different Poor connection between semiconductor devices, causing undesirable consequences such as circuit failure

[0004] Specifically, the traditional bonding using the DBI method (DirectBondInterconnect, DBI) is completed by applying pressure and temperature between different metal pads (pads). In order to ensure the bonding effect, it is necessary to pass CMP before bonding. However, due to the different selection ratio of the CMP slurry for copper and silicon dioxide, it will cause dishing on the top of the copper. If the two-layer interface is bonded through a metal pad with a depression Due to the unevenness of the interface, the bonding performance will decrease, which is not good for bonding, and may lead to poor electrical connection of the entire circuit, thereby affecting the performance of the circuit

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