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Dual auxiliary dopant inlets on epitaxial chamber

A dopant, external doping technology, applied in transportation and packaging, crystal growth, polycrystalline material growth, etc., can solve problems such as damage to product yield

Inactive Publication Date: 2017-05-10
APPLIED MATERIALS INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In some cases, fluctuations in sheet resistance at different locations on the substrate surface can be significant, which can undesirably create problems with reliability of device performance and even compromise product yield

Method used

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  • Dual auxiliary dopant inlets on epitaxial chamber
  • Dual auxiliary dopant inlets on epitaxial chamber
  • Dual auxiliary dopant inlets on epitaxial chamber

Examples

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Embodiment Construction

[0018] The present disclosure provides a gas delivery system with auxiliary dual or multiple dopant inlets coupled to different regions of a processing chamber. During deposition, each dopant inlet may supply the same or a different type of dopant gas to different locations of the substrate disposed in the processing chamber. These auxiliary dual or multiple dopant inlets can be individually controlled to accommodate layer formation with control of different dopant concentrations and / or distributions in the resulting silicon layer formed on the substrate.

[0019] figure 1 A perspective view of a CVD epitaxy module 100 is schematically illustrated, which includes an epitaxy processing chamber 200 incorporated into the CVD epitaxy module 100 . The CVD epitaxial module 100 includes an epitaxial processing chamber 200 and a sub-module 150 attached to the epitaxial processing chamber 200 . In one embodiment, the epitaxial processing chamber 200 is attached to a support frame 10...

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Abstract

The present invention provides methods and apparatus for processing semiconductor substrates with dual or multiple dopant inlets formed at different locations of an epitaxial chamber configured to supply dopant gases toward different locations of the substrate during deposition. In one embodiment, a gas delivery system configured to couple to an epitaxial deposition chamber includes a gas conduit has a first end and a second end configured to dispose in an epitaxial deposition chamber, the first end coupled to a gas panel and a second end branched out to include an auxiliary inner dopant inlet and an auxiliary outer dopant inlet, wherein the auxiliary inner dopant inlet and the auxiliary outer dopant inlet are independently controlled when implementing in the epitaxial deposition chamber.

Description

[0001] background technical field [0002] The present disclosure relates to apparatus and methods for processing semiconductor substrates. In particular, the present invention relates to apparatus and methods for forming epitaxial layers on semiconductor substrates. Background technique [0003] Semiconductor devices are fabricated on silicon substrates and other semiconductor substrates that are fabricated by pulling an ingot from a silicon bath and sawing the ingot into multiple substrates. Subsequently, an epitaxial silicon layer is formed on the substrate. This epitaxial silicon layer is typically doped with boron and has approximately 1x10 16 atoms or greater dopant concentration. For purposes of forming semiconductor devices in or on the epitaxial silicon layer, the material of the epitaxial silicon layer has better controlled properties than the silicon substrate. Epitaxial processes may also be used during the manufacture of semiconductor devices. [0004] Vap...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/205
CPCC23C16/45561C30B25/14C30B29/06Y10T137/2499H01L21/02293H01L21/0257H01L21/20
Inventor 郑锦董友群
Owner APPLIED MATERIALS INC