Unlock instant, AI-driven research and patent intelligence for your innovation.

Tape for semiconductor processing and semiconductor device manufactured using same

A technology for semiconductors and applications, used in semiconductor/solid-state device manufacturing, manufacturing tools, metal processing equipment, etc., can solve problems such as adhesive layer chipping, poor pickup, and reduced semiconductor device manufacturing yields, and achieve excellent processability. Effect

Active Publication Date: 2018-05-29
FURUKAWA ELECTRIC CO LTD
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, in the dicing step, as described above, since the wafer is diced together with the adhesive layer using a dicing blade, not only shavings of the wafer but also shavings of the adhesive layer are generated.
In addition, when chips from the adhesive layer clog the dicing grooves of the wafer, the small pieces adhere to each other, causing pick-up failure, etc., which lowers the manufacturing yield of the semiconductor device.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Tape for semiconductor processing and semiconductor device manufactured using same
  • Tape for semiconductor processing and semiconductor device manufactured using same
  • Tape for semiconductor processing and semiconductor device manufactured using same

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0195] (2) Preparation of acrylic copolymer

[0196] (a-1)

[0197] As an acrylic copolymer (A1) having a functional group, 2-ethylhexyl acrylate, 2-hydroxyethyl acrylate and methacrylic acid were prepared, and the ratio of 2-ethylhexyl acrylate was 60 mol%, A copolymer with a mass average molecular weight of 700,000. Next, add 2-isocyanatoethyl methacrylate to make the iodine value 20, and prepare an acrylic copolymer (a- 1).

[0198] (a-2)

[0199]As an acrylic copolymer (A1) having a functional group, a compound containing lauryl acrylate, 2-hydroxyethyl acrylate and methacrylic acid, with a ratio of lauryl acrylate of 60 mol % and a mass average molecular weight of 800,000 was prepared. copolymer. Next, add 2-isocyanatoethyl methacrylate to make the iodine value 20, and prepare an acrylic copolymer (a- 2).

[0200] As an acrylic copolymer (A1) having a functional group, a butyl acrylate, 2-hydroxyethyl acrylate, and methacrylic acid were prepared, and the ratio of b...

Embodiment 2～6、 comparative example 1

[0226] A tape for semiconductor processing was prepared in the same manner as in Example 1, except that the combination of the acrylic copolymer, the adhesive composition, and the adhesive composition was the combinations described in Tables 1 and 2.

[0227] The tear strength (A)-(C), the pre-cut processability, and the detachability of the adhesive layer of the tape for semiconductor processing of an Example and a comparative example were measured and evaluated as follows. The results are shown in Tables 1 and 2.

[0228] (1) Measurement of tear strength (A) ~ (C)

[0229] From the adhesive layer of the adhesive film used in the semiconductor processing tapes of Examples and Comparative Examples, the release liner has been peeled off, and it is laminated to a thickness of 100 μm. According to JIS K 7128-3, the following Figure 8 The test piece 100 shown in (a) was subjected to a tensile test using a tensile testing machine (TCL-NL type, manufactured by Shimadzu Corporation...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
tear strengthaaaaaaaaaa
tear strengthaaaaaaaaaa
glass transition temperatureaaaaaaaaaa
Login to View More

Abstract

The object of the present invention is to provide a processability that does not cause cuts or cracks due to impacts such as transportation, and does not crack even when stretched in the pre-cutting process of processing the adhesive layer into a predetermined size. Excellent tape for semiconductor processing. The tape (10) for semiconductor processing of the present invention is characterized in that an adhesive layer (13) and an adhesive sheet (15) are laminated, and the adhesive layer (13) is manufactured according to JIS K7128-3. The tear strength (A) by the prescribed rectangular test method is 0.8 MPa or more, and the tear strength (C) by the rectangular test method prescribed in JIS K7128-3 at -15°C is 0.8 MPa or less.

Description

technical field [0001] The present invention relates to an expandable tape for semiconductor processing, and a semiconductor device manufactured using the tape for semiconductor processing; It can be used to fix semiconductor wafers, and it can also be used in the die bonding process or mounting process of bonding diced dies or between dies and substrates, and can be used at the same time. In the process of expanding (expanding) and dividing the adhesive layer along the small piece. Background technique [0002] In the past, in the manufacturing process of semiconductor devices such as integrated circuits (IC: Integrated Circuit), the back grinding (back grinding) process of grinding the back of the wafer in order to film the wafer after the formation of the circuit pattern was carried out; After applying the adhesive and stretchable semiconductor processing tape, the dicing process of dividing the wafer into small piece units; the expanding (expanding) process of expanding...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/301B23K26/38B23K26/53C09J7/20C09J201/00
CPCB23K26/38C09J201/00B23K26/53C09J7/20H01L21/6836H01L21/78
Inventor 中村俊光杉山二朗
Owner FURUKAWA ELECTRIC CO LTD