The pixel structure of cmos image sensor, cmos image sensor and its imaging method

Abstract

In order to enable the CMOS image sensor to achieve ultra-high time-resolution continuous imaging, the present invention provides a pixel structure of the CMOS image sensor, each pixel includes a photodiode with N output ports, N storage devices, N gate valve and N picture element readout circuits; the input ends of the N storage devices are respectively connected to the N output ports of the photodiode through the N gate valves; the output ports of the N storage devices are respectively connected to the The N pixel readout circuits are connected.

Description

technical field [0001] The invention belongs to the field of optical image sensors, and in particular relates to a pixel structure of a CMOS image sensor, a CMOS image sensor and an imaging method thereof. Background technique [0002] Ultra-high-speed imaging systems are of great significance to the study of fast physical processes, and image sensor chips are even more crucial as the core components of imaging systems. There are two main types of traditional image sensors: CCD image sensors and CMOS image sensors. Compared with CCD devices, the advantage of CMOS image sensors is that more high-speed ADCs can be integrated on-chip, so that the data output speed of the image sensor is very high. The traditional CMOS image sensor structure adopts a bidirectional continuous output pixel layout, such as figure 1 As shown, the principle is: the optical signal is converted into an electrical signal in the photosensitive area, and selected by the address decoder in the X and Y di...

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Problems solved by technology

At present, ISIS is mainly researched and applied to CCD image sensors, and it is relatively difficult to realize ISIS under the CMOS process.

figure 2 It is an ISIS planar structure diagram with a linear CCD storage structure. This in-situ image sensor structure is relatively complex, and a higher transfer clock frequency will reduce the transfer efficiency of pixel charges, thereby affecting the performance of the image sensor; and the chip passes through the gate. The ultra-high-speed opening and closing of the valve electrode is used to realize charge collection. Since the entire chip generally exceeds 1 million pixels, each pixel includes interconnected resistors and capacitors. When the gate valve electrode is opened, a large current will be formed inside. , which poses a great challenge to the design of the image sensor and the stability of the imaging

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