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Fabrication method of RB-IGBT (Reverse Blocking Insulated Gate Bipolar Transistor) chip and RB-IGBT (Reverse Blocking Insulated Gate Bipolar Transistor) chip

A production method and chip technology, applied in the field of IGBT, can solve the problems of long time consumption and large waste, and achieve the effect of shortening time, reducing waste of resources and improving production efficiency

Inactive Publication Date: 2017-05-24
SHANGHAI LIANXING ELECTRONICS +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the existing RB-IGBT chip takes a long time to manufacture and wastes a lot

Method used

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  • Fabrication method of RB-IGBT (Reverse Blocking Insulated Gate Bipolar Transistor) chip and RB-IGBT (Reverse Blocking Insulated Gate Bipolar Transistor) chip
  • Fabrication method of RB-IGBT (Reverse Blocking Insulated Gate Bipolar Transistor) chip and RB-IGBT (Reverse Blocking Insulated Gate Bipolar Transistor) chip
  • Fabrication method of RB-IGBT (Reverse Blocking Insulated Gate Bipolar Transistor) chip and RB-IGBT (Reverse Blocking Insulated Gate Bipolar Transistor) chip

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Embodiment Construction

[0029] As mentioned in the background art, the production of the existing RB-IGBT chips takes a long time and is wasteful. Specifically, refer to image 3 As shown, it is a schematic diagram of an existing RB-IGBT chip production, wherein, as long as the substrate includes a scribed area 04 on the front side, then P-type doping is performed on the scribed area 04 to obtain a P-type isolation area 05, Then fabricate the front active region 01 and termination region 02 on the substrate, as well as the planar PN junction on the back, wherein the isolation layer of the RB-IGBT chip is obtained after scribing along the scribing area. The inventors found that since the side of the RB-IGBT chip needs to be completely covered by the isolation layer, it takes a long time to perform P-type doping on the scribe area of ​​the substrate, and the P-type isolation area is prone to appear during the doping process If the diffusion range is too large, the waste will be large.

[0030] Based ...

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Abstract

The present invention discloses a fabrication method of an RB-IGBT (Reverse Blocking Insulated Gate Bipolar Transistor) chip and an RB-IGBT (Reverse Blocking Insulated Gate Bipolar Transistor) chip. According to the fabrication method, when the isolation layer of the RB-IGBT chip is fabricated, corresponding dicing regions are arranged at two surfaces of a substrate respectively; P-type doping is carried out on the dicing regions, so that a P-type isolation region can be obtained; and after the fabrication of the front and back structure of the RB-IGBT chip is finished, the dicing regions are diced, so that the isolation layer of the RB-IGBT chip can be obtained. Since doping is carried out on the two surfaces of the substrate, so that time for forming the P-type isolation region is greatly reduced, fabrication efficiency is improved; and a condition that the dispersion range of the P-type isolation region is too large caused by too long doping time in the fabrication of the P-type isolation region can be avoided. With the fabrication method of the invention adopted, the waste of resources can be reduced, and fabrication costs can be decreased.

Description

technical field [0001] The present invention relates to the field of IGBT technology, and more specifically, relates to a method for manufacturing an RB-IGBT chip and the RB-IGBT chip. Background technique [0002] IGBT (Insulated Gate Bipolar Transistor, Insulated Gate Bipolar Transistor) chip is a voltage-controlled power device with high input impedance of MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor, Metal-Oxide Semiconductor Field-Effect Transistor) And BJT (BipolarJunction Transistor, bipolar junction transistor) has the advantages of low conduction voltage drop, because the IGBT chip has the advantages of small driving power and low saturation voltage, at present, the IGBT chip is widely used as a high-voltage switch in various field. [0003] The front structure of the existing IGBT chip includes an active region and a terminal region, while the back structure is a planar PN junction. Therefore, the existing IGBT chip can only withstand the forward volt...

Claims

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Application Information

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IPC IPC(8): H01L21/331H01L29/739H01L29/06
CPCH01L29/06H01L29/66325H01L29/7393
Inventor 滕渊朱阳军卢烁今田晓丽
Owner SHANGHAI LIANXING ELECTRONICS