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Vertical LED chip and manufacturing method thereof

A technology of LED chips and manufacturing methods, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of low light output rate of LED chips, achieve the effects of increasing the effective light output area, reducing production costs, and wide application prospects

Pending Publication Date: 2017-06-09
SHANGHAI PN STONE PHOTOELECTRIC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0010] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide a vertical LED chip and its manufacturing method, which is used to solve the problem of low light extraction rate of the LED chip in the prior art

Method used

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  • Vertical LED chip and manufacturing method thereof
  • Vertical LED chip and manufacturing method thereof
  • Vertical LED chip and manufacturing method thereof

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Embodiment Construction

[0056] Embodiments of the present invention are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation modes, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.

[0057] see Figure 4 ~ Figure 10 . It should be noted that the diagrams provided in this embodiment are only schematically illustrating the basic idea of ​​the present invention, and only the components related to the present invention are shown in the diagrams rather than the number, shape and shape of the components in actual implementation. Dimensional drawing, the type, quantity and proportion of each component can be changed arb...

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Abstract

The invention provides a vertical LED chip and a manufacturing method thereof. The vertical LED chip comprises a substrate, an epitaxial structure, a table board of an N-electrode lead wire region formed on a cutting channel and adjacent to a first edge of the cutting channel, an N-electrode lead wire, an insulating layer, a P-electrode lead wire and an N welding pad. According to the vertical LED chip and the manufacturing method thereof, a P-electrode welding pad and the N-electrode welding pad are manufactured on the same edge of the LED chip, the N-electrode welding pad and the P-electrode welding pad are welded on the supporting substrate in a laterally standing manner so as to realize electrical lead-out, thus the front and back surfaces of the LED chip can emit light simultaneously, structures such as a reflector do not need to be manufactured, the manufacturing cost of the LED chip is reduced, and the light emitting efficiency of the LED chip is greatly improved. Through adjusting the chip structure, the LED chip has the feature of emitting light form the front and back surfaces simultaneously, and the effective light-emitting area of the LED chip can be doubled.

Description

technical field [0001] The invention relates to a semiconductor lighting device and a manufacturing method thereof, in particular to a vertical LED chip and a manufacturing method thereof. Background technique [0002] As a new type of high-efficiency solid light source, semiconductor lighting has significant advantages such as long life, energy saving, environmental protection, and safety. It will become another leap in the history of human lighting after incandescent lamps and fluorescent lamps. The upgrading of the industry and other industries has huge economic and social benefits. Because of this, semiconductor lighting is generally regarded as one of the most promising emerging industries in the 21st century, and also one of the most important commanding heights in the field of optoelectronics in the next few years. Light-emitting diodes LEDs are made of semiconductors such as GaAs (gallium arsenide), GaP (gallium phosphide), GaAsP (gallium arsenide phosphide), and it...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/36H01L33/00
CPCH01L33/0066H01L33/0075H01L33/36H01L2933/0016
Inventor 杨杰常文斌林宇杰
Owner SHANGHAI PN STONE PHOTOELECTRIC