Unlock instant, AI-driven research and patent intelligence for your innovation.

Vertical-cavity surface emitting laser for micro-atomic sensor

A vertical cavity surface emission and sensor technology, which is applied to lasers, laser components, semiconductor lasers, etc., can solve the problem of yield decline and achieve the effect of avoiding yield decline

Active Publication Date: 2017-06-13
CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
View PDF5 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In order to solve the above problems, the present invention provides a vertical cavity surface-emitting laser for miniature atomic sensors, which can be achieved without increasing the complexity of the device process and material growth process, without using external temperature control, and without affecting other basic performance of the device. In this way, the wavelength can be moved to the range that meets the application requirements, avoiding the problem of yield reduction caused by the influence of device material growth and manufacturing process on the wavelength

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Vertical-cavity surface emitting laser for micro-atomic sensor
  • Vertical-cavity surface emitting laser for micro-atomic sensor
  • Vertical-cavity surface emitting laser for micro-atomic sensor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0022] The core idea of ​​the present invention is to provide a vertical cavity surface emitting laser for miniature atomic sensors, which can be used without increasing the complexity of the device process and material growth process, without using external temperature control, and without affecting other basic performance of the device. Move its wavelength to the range that meets the application requirements, and avoid the problem of yield reduction caused by the influence of device material growth and manufacturing process on wavelength.

[0023] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a vertical-cavity surface emitting laser for a micro-atomic sensor. The vertical-cavity surface emitting laser comprises a substrate layer, an N-type DBR layer, an active layer and a P-type DBR layer which are sequentially arranged on the upper surface of an N surface electrode to form a cylindrical table board and a segmented columnar table board separately; an annular window is formed in the periphery of the cylindrical table board, the bottom of the cylindrical table board is located in the N-type DBR layer, a dielectric film current limiting layer is arranged on the bottom surface and the side surfaces of the cylindrical table board and one part of upper surface of the P-type DBR layer located in the periphery of the cylindrical table board, and a P surface electrode is arranged on the side surface and the upper surface of the cylindrical table board and one part of upper surface of the P-type DBR layer located on the upper surface of the cylindrical table board; and a laser reflector covers the area, outside the peripheral part of the P surface electrode, of the upper surface of the P-type DBR layer of the segmented columnar table board. According to the vertical-cavity surface emitting laser, a wavelength can move to the range meeting application requirements on the premise of not increasing the complexity of a device process and a material growth process, not using external temperature control and not affecting the performance of a device; and the problem of reduction of the device yield is solved.

Description

technical field [0001] The invention belongs to the technical field of semiconductor lasers, in particular to a vertical-cavity surface-emitting laser used for miniature atomic sensors. Background technique [0002] Vertical Cavity Surface Emitting Laser (VCSEL) is a new type of semiconductor laser whose laser emission direction is perpendicular to the chip surface. Due to its unique resonant cavity structure, VCSEL has high modulation bandwidth and is very suitable for various types of optical and electronic devices. Components are integrated in a high density. In recent years, miniature atomic sensors based on VCSEL technology, such as atomic clocks, atomic magnetometers, and atomic gyroscopes, have developed rapidly. Such atomic sensors have broad application prospects in portable positioning and navigation equipment. The main principle is to use the laser emitted by VCSEL Interact with the vapor of alkali metal atoms in tiny gas chambers to obtain the signals needed for...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/183H01S5/187
CPCH01S5/18369H01S5/187
Inventor 张星钟础宇张建伟秦莉宁永强
Owner CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI