Semiconductor optical waveguide, semiconductor optical mudulator, and semiconductor optical modulation system
A light modulator, semiconductor technology, applied in semiconductor devices, instruments, optics, etc., to achieve the effect of improving modulation efficiency
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no. 1 approach 〕
[0042] refer to figure 1 as well as figure 2 , the semiconductor optical waveguide 10 according to the first embodiment of the present invention will be described. figure 1 (a) is a perspective view showing the structure of the semiconductor optical waveguide 10 . figure 1 (b) is a perspective view showing the configuration of the core wire 11 included in the semiconductor optical waveguide 10 . figure 2 (a) is a cross-sectional view showing the structure of the semiconductor optical waveguide 10, showing along figure 1 (a) is a partial cross-sectional view of a part of the cross-section along the A-A' line shown in the figure. figure 2 (b) is a cross-sectional view showing the structure of the core wire 11 included in the semiconductor optical waveguide 10, and shows along figure 1 (a) is a partial cross-sectional view of a part of the cross-section along the A-A' line shown in the figure. along figure 1 The cross section along line A-A' shown in (a) is a cross...
no. 3 example
[0146] refer to Figure 5 The semiconductor optical waveguide 10 of the third embodiment group of the present invention will be described. In the semiconductor optical waveguide 10 of the third embodiment group, by making the width W ver2 To investigate the influence of the total area of the bonding surface 12S on the modulation efficiency and high-frequency characteristics.
[0147] Figure 5 (a) represents the width W of the half-wave voltage Vpi of the semiconductor optical waveguide 10 of the third embodiment group ver2 A graph of the simulation results for dependencies. It can be said that the half-wave voltage Vpi is a physical quantity corresponding to the modulation efficiency, and the smaller the half-wave voltage Vpi is, the higher the modulation efficiency is.
[0148] Figure 5 (b) represents the width W of the 3dB bandwidth of the semiconductor optical waveguide 10 of the third embodiment group ver2 A graph of the simulation results for dependencies. It c...
no. 4 example 〕
[0162] refer to Image 6 A semiconductor optical waveguide 10 according to a fourth embodiment of the present invention will be described. Image 6 In the semiconductor optical waveguide 10 of the fourth embodiment, the phase is shown when the hole density of the p-type semiconductor region 12a is changed in the range of 30% to 130% with respect to the electron density of the n-type semiconductor region 12b. Variation chart.
[0163] When the ratio of the hole density to the electron density is 100%, it means that the doping level of the p-type semiconductor region 12a is equal to the doping level of the n-type semiconductor region 12b. Such doping is called symmetric doping. When the ratio of the hole density to the electron density is 50%, it means that the doping level of the p-type semiconductor region 12a is 1 / 2 of the doping level of the n-type semiconductor region 12b. Such doping is called asymmetric doping.
[0164] exist Image 6In , the amount of phase change per ...
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