Ion source sputtering target material device with high utilization rate and using method thereof

Abstract

The invention relates to the technical field of ion source sputtering, more particular to an ion source sputtering target material device with high utilization rate and a using method thereof. The device comprises a back plate, and a first target material, a second target material, a third target material and a fourth target material which are detachably arranged on the back plate; the four target materials are all of rectangular structures, and the four target materials are spliced together in a grid-shaped structure. According to the ion source sputtering target material device with the high utilization rate, the four target materials are arranged, and the four target materials are detachably spliced on the back plate in a grid-shaped structure, so that the relative positions when the four target materials are spliced can be re-adjusted after first sputtering of an ion source, and sputtering is performed again by using the ion source; the operations of target material position adjustment and ion source sputtering are repeated until the four corners of each target material are used; the device can greatly improve the utilization rate of the target materials, reduce the production cost, ensure the stability of target material deposition rate and prevent a manufactured thin film from being polluted.

Description

technical field [0001] The invention relates to the technical field of ion source sputtering, and more particularly, to an ion source sputtering target device with high utilization rate and a method for using the same. Background technique [0002] Ion source sputtering technology is a technology that uses an ion source to bombard the surface of targets made of different materials in a vacuum chamber, so that the target material is deposited on the surface of the product. It is a technology developed in recent years to prepare high-quality thin films. It is a very important method, which has advantages unmatched by other film-forming technologies, such as less pollution and precise and controllable film-forming conditions. [0003] However, the beam current of the ion source has strong directionality, and the surface area of ​​the bombarded target is too small. Generally, the utilization rate of the target is only about 10%, which causes a lot of waste and increases the prod...

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Problems solved by technology

[0003] However, the beam directionality of the ion source is strong, and the surface area of ​​the bombarded target is too small. Generally, the utilization rate of the target is only about 10%, which causes a lot of waste and increases the production cost.

In order to improve the utilization rate of the target, the way of swinging the target is usually adopted, but the swinging of the target will affect the stability of the material deposition rate, and if the swinging range of the target is too large, the ion beam will bombard the outer edge of the target and contaminate the film

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