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Data reading method, memory control circuit unit, and memory storage device

A data unit, data reading technology, applied in the direction of electrical digital data processing, data processing input/output process, instruments, etc., can solve problems such as the upper limit of the correction code correction ability and the reduction of the number of error bits.

Active Publication Date: 2017-06-27
PHISON ELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the correction capability of error correcting codes has its upper limit
For example, if the turbo code algorithm or the low-density parity-check correction code algorithm is used to implement the error correction code in an iterative manner, as the number of iterative decoding increases to a certain number, the number of error bits will vary in the subsequent iterative decoding process. decrease as the number of iterations increases

Method used

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  • Data reading method, memory control circuit unit, and memory storage device
  • Data reading method, memory control circuit unit, and memory storage device
  • Data reading method, memory control circuit unit, and memory storage device

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Embodiment Construction

[0088] Generally speaking, a memory storage device (also called a memory storage system) includes a rewritable non-volatile memory module and a controller (also called a control circuit unit). Typically memory storage devices are used with a host system so that the host system can write data to or read data from the memory storage device.

[0089] figure 1 It is a schematic diagram showing a host system, a memory storage device and an input / output (I / O) device according to an exemplary embodiment. and figure 2 It is a schematic diagram showing a host system, a memory storage device and an input / output (I / O) device according to another exemplary embodiment.

[0090] Please refer to figure 1 and figure 2 , the host system 11 generally includes a processor 111 , a random access memory (random access memory, RAM for short) 112 , a read only memory (ROM for short) 113 and a data transmission interface 114 . The processor 111 , the RAM 112 , the ROM 113 and the data transmiss...

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Abstract

The invention provides a data reading method, a memory control circuit unit, and a memory storage device used in a rewritable nonvolatile memory module. The method comprises performing an error correction decoding operation on the user data string based on the error checking and correction code to generate a first decoded data string; searching for a plurality of uncorrectable sub-data units among the decoded sub-data units of the first decoded data string, selecting at least one target sub-data unit from the uncorrectable sub-data units; the target sub-data unit is adjusted in the first decoded data string to generate an adjusted user data string and an error correction decoding operation is re-performed on the adjusted user data string to generate a second decoded data string; If there is no error bit in the second decoded data string, the second decoded data string is used as the corrected data string to be sent to a host system. By means of the data reading method, the memory control circuit unit, and the memory storage device, the read data can be effectively corrected.

Description

technical field [0001] The invention relates to a data reading method for a rewritable non-volatile memory module, a memory control circuit unit and a memory storage device. Background technique [0002] Digital cameras, mobile phones, and MP3 players have grown rapidly in recent years, making consumers' demand for storage media also increase rapidly. Since the rewritable non-volatile memory module (for example, flash memory) has the characteristics of data non-volatility, power saving, small size, and no mechanical structure, it is very suitable for being built in the various memory modules listed above. in portable multimedia devices. [0003] Generally speaking, the data written to the rewritable non-volatile memory module will be encoded according to an error correction code, and the data read from the rewritable non-volatile memory module will also pass through the corresponding program to decode. However, the correction capability of the error correction code has it...

Claims

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Application Information

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IPC IPC(8): G06F3/06
CPCG06F3/0614G06F3/0679
Inventor 林纬王天庆赖国欣
Owner PHISON ELECTRONICS