A kind of laser and its manufacturing method

Abstract

The invention discloses a laser and a manufacturing method thereof, which are used to solve the problem that the optical confinement factor of the laser cannot be improved and the threshold value of the laser is kept low. Source layer, N doped layer and P doped layer; Projections of the heterogeneous layer and the active layer on the substrate do not overlap each other; wherein, the active layer is used to generate light under the action of the P-doped layer and the N-doped layer. The N-doped layer, the active layer and the P-doped layer are sequentially arranged along the direction perpendicular to the thickness of the substrate, which can greatly reduce the thickness of the laser chip, thereby increasing the optical confinement factor of the active layer. There is no need to reduce the thickness of the N-doped layer and the P-doped layer, and the absorption loss to the light field will not be increased. Therefore, the laser provided by the embodiment of the present invention can take into account the improvement of light confinement factor and low threshold.

Description

technical field [0001] The invention relates to the field of optoelectronic technology, in particular to a laser and a manufacturing method thereof. Background technique [0002] Lasers are common components in electronic equipment, and are widely used in many fields such as communication, detection, sensing, and industrial production. On the basis of Metal Oxide Semiconductor (CMOS) technology, silicon-based luminescence is realized, and photons are used instead of electrons as information carriers, thereby greatly improving information transmission speed, increasing integration and reducing communication power consumption. [0003] Silicon photonics integration technology has the advantages of high bandwidth, low power consumption, high integration and compatibility with CMOS technology, and has broad applications in the fields of optical communication, detection and sensing. However, silicon is an indirect bandgap material with extremely low luminous efficiency and is no...

AI Technical Summary

Problems solved by technology

[0009] The present invention provides a laser and a manufacturing method, which are used to solve the problems in the prior art that the thickness of light-emitting components can be reduced in a limited range, and that it is impossible to simultaneously improve the laser light confinement factor and maintain a low threshold value of the laser.

Images