Silicon-based lateral injection laser and preparation method thereof

Abstract

The invention provides a silicon-based horizontal injection laser and a preparation method thereof. The silicon-based horizontal injection laser comprises a silicon substrate, a silicon dioxide window layer, a strip waveguide, an insulating medium layer, a p electrode and an n electrode, wherein a waveguide groove is manufactured in the middle of the upper surface of the silicon substrate; a p-type doped region and an n-type doped region are formed in two sides of the waveguide groove in the upper surface of the silicon substrate; the silicon dioxide window layer is manufactured on one part of the surface of the silicon substrate; side windows are formed in the upper surface, corresponding to the p-type doped region and the n-type doped region, of the silicon dioxide window layer separately; the strip waveguide grows in the waveguide groove of the silicon substrate; the insulating medium layer is manufactured on the surface of the strip waveguide and covers the surface of the silicon dioxide window layer; the p electrode is manufactured in one side window in the silicon dioxide window layer in the P-type doped region; and the n electrode is manufactured in the other side window in the silicon dioxide window layer in the n-type doped region. By the silicon-based horizontal injection laser, the compatibility of the silicon-based horizontal injection laser and a silicon CMOS process can be improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor lasers, in particular to a silicon-based lateral injection laser and a preparation method thereof. technical background [0002] With the integration of silicon integrated circuits getting higher and higher and the speed of information transmission getting faster and faster, the traditional electrical interconnection has shown its technical limitations and cannot meet the needs of high bandwidth and low power consumption. Optical interconnection has the characteristics of high speed, high bandwidth, and low power consumption. Therefore, people are eager to realize optical interconnection in a short distance, even silicon-based optical interconnection between chips and inside chips. Among the most important basic devices in silicon-based optical interconnection, except for silicon-based light sources, other devices can be realized under the current silicon process conditions. This makes effi...

AI Technical Summary

Problems solved by technology

The silicon-based germanium laser designed by MIT and the University of Stuttgart in Germany has a vertical p-n structure, and the absorption of light by the doped layer and the electrode is not well avoided. The sidewall of the waveguide formed by etching has a large optical loss, and it is necessary to use complex materials that are not very sensitive to germanium. Mature chemical mechanical polishing process and other issues

Due to the large optical loss of the waveguide, the consistency of the device is not good, the lasing threshold of the device is too large, the life is very short, and continuous operation cannot be achieved.

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