photoelectric conversion device

Abstract

A photoelectric conversion device with improved electric characteristics is provided. The photoelectric conversion device has a structure in which a window layer is formed by a stack of a first silicon semiconductor layer and a second silicon semiconductor layer, and the second silicon semiconductor layer has high carrier concentration than the first silicon semiconductor layer and has an opening. Light irradiation is performed on the first silicon semiconductor layer through the opening without passing through the second silicon semiconductor layer; thus, light absorption loss in the window layer can be reduced.

Description

technical field [0001] The invention relates to a photoelectric conversion device. Background technique [0002] In recent years, photoelectric conversion devices that do not emit carbon dioxide during power generation have attracted attention as a measure against global warming. A solar cell using a crystalline silicon substrate such as single crystal silicon, polycrystalline silicon, or the like is known as a typical example of the above photoelectric conversion device. [0003] In a solar cell using a crystalline silicon substrate, a structure having a so-called homojunction (homojunction) is widely used, in which the conductivity type and that of the crystalline silicon substrate are formed by diffusing impurities on one side of the crystalline silicon substrate. the opposite layer. [0004] In addition, a structure is also known in which a heterojunction (hetero junction) is formed by forming amorphous silicon whose optical bandgap and conductivity type are different ...

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Problems solved by technology

[0010] Although photocarriers are also generated in the window layer, minority carriers are easy to recombine in the window layer, so most of the photocarriers that can be taken out as current are generated in the crystalline silicon substrate on the opposite side of the p-n junction inside the back electrode side of the

Therefore, the light absorbed in the window layer is substantially not utilized

[0011] In addition, the above-mentioned i-type amorphous semiconductor layer has low electrical conductivity because it is amorphous, which also causes resistance loss.

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