Method for processing electron transmission layer in perovskite solar cell via ultraviolet laser

A technology for solar cells and electron transport layers, applied in photovoltaic power generation, circuits, electrical components, etc., can solve problems such as increasing the cost of battery preparation, and achieve the advantages of avoiding high-temperature preparation, increasing open-circuit voltage and short-circuit current density, and increasing transmittance. Effect

Inactive Publication Date: 2017-07-07
HEFEI INSTITUTES OF PHYSICAL SCIENCE - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0002] Perovskite solar cells have developed rapidly in recent years, and have the characteristics of high efficiency, low cost, and simple preparation process; the electron transport layer is an important structure in perovskite solar cells, which can improve electron extraction and block holes. The role of transport, the electron transport layer generally requires high light transmittance and high electron mobility; TiO 2 ZnO and ZnO are the most widely studied electron transport

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  • Method for processing electron transmission layer in perovskite solar cell via ultraviolet laser
  • Method for processing electron transmission layer in perovskite solar cell via ultraviolet laser
  • Method for processing electron transmission layer in perovskite solar cell via ultraviolet laser

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Experimental program
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Embodiment 1

[0024] (1) ultrasonically clean the FTO glass substrate in acetone, absolute ethanol, and deionized water successively, and dry it for later use;

[0025] (2) GZO film was prepared by magnetron sputtering. The distance between the substrate and the GZO target (Ga-doped atomic percentage is 5%) was 6 cm. During the working process, the mechanical pump was used in turn, and the molecular pump vacuumed the cavity to 4×10 -4 Pa, followed by argon gas with a gas flow rate of 40 ml / min. After 10 minutes, the working pressure was adjusted to 0.6 Pa. After 10 minutes of pre-sputtering, a thin film was deposited on the substrate, and the deposition time was 3 minutes. After the deposition is completed, take it out, the thickness of the film is about 36 nanometers, and store it in a vacuum drying oven;

[0026] (3) A 308nm XeCl ultraviolet laser is used to process the film, the radiated laser energy is 200 millijoules, the energy density of the GZO film is 60, 75, 90, 105 millijoules p...

Embodiment 2

[0029] (1) ultrasonically clean the FTO glass substrate in acetone, absolute ethanol, and deionized water successively, and dry it for later use;

[0030](2) AZO film is prepared by magnetron sputtering. The distance between the substrate and the GZO target (Al doping atomic percentage is 5%) is 6 cm. During the working process, the mechanical pump is used in turn, and the molecular pump vacuums the cavity to 5×10 -4 Pa, followed by argon gas with a gas flow rate of 3 ml / min. After 10 minutes, the working pressure was adjusted to 0.4 Pa. After 10 minutes of pre-sputtering, a thin film was deposited on the substrate, and the deposition time was 3 minutes. After the deposition is completed, take it out, the thickness of the film is about 45 nanometers, and store it in a vacuum oven;

[0031] (3) A 308nm XeCl ultraviolet laser is used to process the film, the radiated laser energy is 200 millijoules, the energy density of the GZO film is 60, 75, 90, 105 millijoules per square ce...

Embodiment 3

[0033] (1) ultrasonically clean the FTO glass substrate and the PEN flexible substrate in acetone, absolute ethanol, and deionized water in sequence, and dry them for later use;

[0034] (2) Add 1.772 g of zinc acetate into 20 ml of ethylene glycol methyl ether, stir until completely dissolved, then slowly add 0.486 ml of ethanolamine dropwise, stir for 1 hour, filter through a 0.22 micron filter, and place a stopper In test tubes, aged for 48 hours. Add 100 microliters of colloidal solution onto the substrate dropwise, spin-coat in the glove box at 3000 rpm, spin-coat for 45 seconds, and then heat at 150 degrees Celsius for 1 hour. This process is repeated 3 times to obtain a ZnO film with a film thickness of About 90 nanometers;

[0035] (3) A 248nm laser was used to process the ZnO thin film, and the energy densities of the treatment were 100 mJ / cm2, 150 mJ / cm2, and 200 mJ / cm2. The pulse numbers were 1, 5, 10, and 20, respectively.

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Abstract

The invention discloses a method for processing an electron transmission layer in a perovskite solar cell via ultraviolet laser. A hard ITO/FTO substrateor a flexible PI/PEN substrate can be selected, an electron transmission layer can select ZnO, TiO2, Al-doped ZnO (AZO), Ga-doped ZnO (GZO) and SnO2 films, and a magnetron sputtering method and a spin coating method can be used for preparation. Laser annealing uses UV laser of 308, 248 and 355 nanometers and the like. Optical and electrical performances of the processed films are improved, the films as the electron transmission layer are applied to the perovskite solar cell, the processing temperature of the electron transmission layer can be reduced effectively, and the photoelectric conversion efficiency of the cell is improved.

Description

technical field [0001] The invention relates to the field of photoelectric materials, new energy materials and technologies, in particular to semiconductor oxide thin films, laser annealing treatment methods and the manufacture of perovskite solar cells. Background technique [0002] Perovskite solar cells have developed rapidly in recent years, and have the characteristics of high efficiency, low cost, and simple preparation process; the electron transport layer is an important structure in perovskite solar cells, which can improve electron extraction and block holes. The role of transport, the electron transport layer generally requires high light transmittance and high electron mobility; TiO 2 ZnO and ZnO are the most widely studied electron transport layer materials. In order to obtain higher photoelectric conversion efficiency, high temperature heating of about 500 degrees Celsius is usually required to improve their electron mobility, which increases the cost of batter...

Claims

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Application Information

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IPC IPC(8): H01L51/42H01L51/48
CPCH10K30/15H10K30/151H10K30/152Y02E10/549
Inventor 夏锐董伟伟王时茂方晓东邵景珍
Owner HEFEI INSTITUTES OF PHYSICAL SCIENCE - CHINESE ACAD OF SCI
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