Manufacturing method of tft substrate
A manufacturing method and substrate technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of difficult adjustment, high cost, poor stability and height uniformity, etc., to improve stability and reduce production costs , the effect of reducing the difficulty of development
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[0038] In order to further illustrate the technical means adopted by the present invention and its effects, the following describes in detail in conjunction with preferred embodiments of the present invention and accompanying drawings.
[0039] see image 3 , the invention provides a kind of manufacturing method of TFT substrate, comprises the following steps:
[0040] Step 1. Please refer to Figure 4 , providing a base substrate 10, the base substrate 10 has a plurality of sub-pixel regions SP arranged in an array; please refer to Figure 5 , fabricating a thin film transistor T and a storage capacitor C on the base substrate 10 .
[0041] Specifically, the height of the thin film transistor T is greater than the height of the storage capacitor C. Preferably, the height difference between the thin film transistor T and the storage capacitor C is greater than 0.3 μm.
[0042] Specifically, the step 1 specifically includes:
[0043] Step 11, depositing a first metal layer...
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