Unlock instant, AI-driven research and patent intelligence for your innovation.

Manufacturing method of tft substrate

A manufacturing method and substrate technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of difficult adjustment, high cost, poor stability and height uniformity, etc., to improve stability and reduce production costs , the effect of reducing the difficulty of development

Active Publication Date: 2020-04-07
SHENZHEN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the prior art, the black photoresist material coated on the flat layer 500' and the pixel electrode 600' is generally exposed to three different light intensities through a Multi Tone Mask (MTM), and three types of photoresists are obtained after development. The BPS light-shielding layer 700' of different heights can obtain the black matrix 710' and the main photoresist spacer 710' and the auxiliary photoresist spacer 720' located thereon, but the multi-color photomask has complicated manufacturing process and high cost. Moreover, the process of exposing and forming the BPS light-shielding layer 700' is difficult to adjust (three heights need to be taken into account), and the stability and height uniformity of the formed BPS light-shielding layer 700' are poor, which makes the development of materials for making the BPS light-shielding layer 700' more difficult.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Manufacturing method of tft substrate
  • Manufacturing method of tft substrate
  • Manufacturing method of tft substrate

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0038] In order to further illustrate the technical means adopted by the present invention and its effects, the following describes in detail in conjunction with preferred embodiments of the present invention and accompanying drawings.

[0039] see image 3 , the invention provides a kind of manufacturing method of TFT substrate, comprises the following steps:

[0040] Step 1. Please refer to Figure 4 , providing a base substrate 10, the base substrate 10 has a plurality of sub-pixel regions SP arranged in an array; please refer to Figure 5 , fabricating a thin film transistor T and a storage capacitor C on the base substrate 10 .

[0041] Specifically, the height of the thin film transistor T is greater than the height of the storage capacitor C. Preferably, the height difference between the thin film transistor T and the storage capacitor C is greater than 0.3 μm.

[0042] Specifically, the step 1 specifically includes:

[0043] Step 11, depositing a first metal layer...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
transmittivityaaaaaaaaaa
transmittivityaaaaaaaaaa
transmittivityaaaaaaaaaa
Login to View More

Abstract

The invention provides a TFT substrate manufacturing method. A half tone mask is utilized to prepare a BPS light shield layer; the half tone mask has a first light transmitting area and a second light transmitting area corresponding to a thin film transistor and a storage capacitor respectively, as well as a third light transmitting area encompassing the first and second light transmittance areas and corresponding to a boundary region of adjacent sub-pixel regions, wherein light transmittance of the first light transmitting area and light transmittance of the second light transmittance areas are same, and larger than light transmittance of the third light transmitting area; the BPS light shield layer comprises a black matrix, a main photo spacer and a subsidiary photo spacer, wherein the main photo spacer and the subsidiary photo spacer are arranged on the black matrix and are corresponding to the thin film transistor and the storage capacitor respectively; by enabling the length and width of the first light transmitting area to be larger than the length and width of the second light transmitting area, and setting that the height of the thin film transistor is larger than the height of the storage capacitor, the height of the main photo spacer is larger than the height of the subsidiary photo spacer; and by adopting the half tone mask only having two kinds of light transmittance, production cost can be reduced, stability of the manufacturing process is improved and uniformity of the BPS light shield layer is improved.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a method for manufacturing a TFT substrate. Background technique [0002] With the development of display technology, liquid crystal displays (Liquid Crystal Display, LCD) and other flat display devices are widely used in mobile phones, televisions, personal Various consumer electronic products such as digital assistants, digital cameras, notebook computers, and desktop computers have become the mainstream of display devices. [0003] Usually, the liquid crystal display panel consists of a color filter (Color Filter, CF) substrate, a thin film transistor (Thin Film Transistor, TFT) substrate, a liquid crystal (LC, Liquid Crystal) and a sealant frame (Sealant) sandwiched between the color filter substrate and the thin film transistor substrate. ), the molding process generally includes: the front-end array (Array) process (film, yellow light, etching and stripping), the middle-s...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/77H01L27/12
CPCH01L27/1255H01L27/1288
Inventor 柳铭岗邓竹明
Owner SHENZHEN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD