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Field effect transistor device and method for manufacturing field effect transistor device

A technology of field effect transistors and devices, applied in semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, semiconductor devices, etc.

Active Publication Date: 2021-05-25
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Formation of metal contacts or interconnects is challenging for semiconductor devices with high integration and tight design rules

Method used

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  • Field effect transistor device and method for manufacturing field effect transistor device
  • Field effect transistor device and method for manufacturing field effect transistor device
  • Field effect transistor device and method for manufacturing field effect transistor device

Examples

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Embodiment Construction

[0042] The following disclosure provides many different embodiments or examples for implementing different features of the presented subject matter. Specific examples of components and arrangements are described below to simplify the present disclosure. Of course, these are examples only and are not intended to limit the invention. For example, in the following description, forming a first component over or on a second component may include embodiments in which the first component and the second component are formed in direct contact, and may also include embodiments in which the first component and the second component may be formed in direct contact. An embodiment in which an additional part is formed so that the first part and the second part may not be in direct contact. In addition, the present invention may repeat reference numerals and / or letters in various instances. This repetition is for simplicity and clarity, and does not in itself indicate a relationship between...

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PUM

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Abstract

The embodiment of the present invention relates to a field effect transistor device and a manufacturing method of the field effect transistor device. The field effect transistor device includes a substrate, at least one gate stack structure, source and drain regions, and an interconnection structure. The interconnection structure includes a metal interconnection connected to the conductive area, an adhesive sheath structure, and a capping layer. The adhesive sheath structure is disposed between the metal interconnection and the interlayer dielectric layer and surrounds the metal interconnection. The capping layer is disposed on the metal interconnection and covers the gap between the metal interconnection and the interlayer dielectric layer.

Description

technical field [0001] The embodiment of the present invention relates to a field effect transistor device and a manufacturing method of the field effect transistor device. Background technique [0002] As the line width of semiconductor devices continues to scale down, CMOS-compatible semiconductor devices such as planar field effect transistors or fin-type metal oxide semiconductor field effect transistors (fin-type metal oxide semiconductor field effect transistors) , FinFET) gate width and channel length continue to shrink. For semiconductor devices with high integration and tight design rules, the formation of metal contacts or interconnects is quite challenging. Contents of the invention [0003] A field effect transistor device includes a substrate, a dielectric layer, a conductive region, an interlayer dielectric layer and an interconnection structure. The substrate has at least one gate stack structure thereon, and source and drain regions respectively arranged ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/78H01L23/48
CPCH01L23/481H01L29/785H01L23/53266H01L23/5329H01L21/76808H01L21/7682H01L21/76831H01L2221/1026H01L2221/1031H01L2221/1063H01L23/53295H01L23/53238H01L23/5226H01L29/4232H01L23/5381H01L23/4821
Inventor 张哲诚林志翰
Owner TAIWAN SEMICON MFG CO LTD