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A kind of igbt driving device and driving method

A driving device and driving circuit technology, which is applied in the direction of electrical components, pulse technology, electronic switches, etc., to achieve the effect of suppressing the turn-off voltage peak, reducing the current, and reducing the risk of damage

Active Publication Date: 2020-08-11
CSR ZHUZHOU ELECTRIC LOCOMOTIVE RES INST
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide an IGBT drive device and a drive method to solve the technical problem that the traditional IGBT drive device and method cannot reduce the IGBT switching loss while taking into account the safety and reliability of the IGBT

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  • A kind of igbt driving device and driving method
  • A kind of igbt driving device and driving method
  • A kind of igbt driving device and driving method

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Embodiment Construction

[0040] The implementation of the present invention will be described in detail below in conjunction with the accompanying drawings and examples, so as to fully understand and implement the process of how to apply technical means to solve technical problems and achieve technical effects in the present invention. It should be noted that, as long as there is no conflict, each embodiment and each feature in each embodiment of the present invention can be combined with each other, and the formed technical solutions are all within the protection scope of the present invention.

[0041] An embodiment of the present invention provides an IGBT driving device, such as figure 1 As shown, the device includes: a communication unit, a drive circuit unit and a drive control unit. Wherein, the communication unit is used for receiving the PWM signal. The input end of the drive circuit unit is connected to the drive control unit, and the output end is connected to the gate of the IGBT. The dri...

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Abstract

The invention discloses an IGBT (Insulated Gate Bipolar Transistor) driving device and driving method, belongs to the technical field of a semiconductor power device, and solves the technical problem that a conventional IGBT driving device and method cannot give consideration to safety and reliability of an IGBT when switching loss of the IGBT is reduced. The IGBT driving device comprises a communication unit, a driving circuit unit and a driving control unit, wherein the communication unit is used for receiving a PWM signal; the output end of the driving circuit unit is connected with a gate electrode of the IGBT; the driving circuit unit comprises a plurality of driving resistance branch circuits; the input end of the driving control unit is connected with the communication unit; the output end of the driving control unit is connected with the driving circuit unit; and the driving control unit is used for, according to stages in which the IGBT is in the turning-on and turning-off processes, selecting the driving resistance branch circuits from the driving circuit unit to transmit the PWM signal in the corresponding stages.

Description

technical field [0001] The invention relates to the technical field of semiconductor power devices, in particular to an IGBT driving device and a driving method. Background technique [0002] Currently, Insulated Gate Bipolar Transistor (IGBT), as a third-generation semiconductor device, has been applied to various fields of life, including rail transportation, industrial transmission, wind power generation, electric vehicles, and household appliances. With the continuous development and progress of IGBT devices, the high frequency and low loss of devices have become a strong demand in various fields. [0003] The research on IGBT driving is one of the focuses of our research on IGBT switching loss. Traditional IGBT drivers use a gate turn-on resistor and a turn-off resistor to control the on and off of the IGBT. With a smaller gate resistance, the IGBT is turned on and off quickly, which can reduce the switching loss of the IGBT, but it will cause a large turn-on current ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H03K17/567
CPCH03K17/567
Inventor 曹超杨涛李彦涌杨乐乐蒋林周伟魏海山欧阳柳张东辉马龙昌
Owner CSR ZHUZHOU ELECTRIC LOCOMOTIVE RES INST