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Method of cleaning electrostatic chuck

An electrostatic chuck and cleaning technology, applied in cleaning methods and utensils, holding devices using electrostatic attraction, cleaning flexible objects, etc., can solve the problems of pollution, time-consuming, increased cost, etc., to simplify maintenance procedures, save downtime and dismantling and the effect of the timing of reloading the correction

Inactive Publication Date: 2017-08-11
ADVANCED ION BEAM TECHNOLOGY INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Secondly, the process of removing, moving and installing the electrostatic chuck may damage the electrostatic chuck
Furthermore, the process of moving the electrostatic chuck out of the reaction chamber of the manufacturing process needs to break the vacuum, which may cause additional pollution, and the process of moving the electrostatic chuck into the reaction chamber of the manufacturing process needs to be evacuated again, which is time-consuming
Finally, after installing the electrostatic chuck in the reaction chamber of the ion implanter’s manufacturing process, the entire ion implanter needs to be inspected again. It is often necessary to use several workpieces for ion implantation for testing, which consumes time and increases costs.

Method used

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Embodiment Construction

[0019] A detailed description of the present invention will be discussed by means of the following examples, which are not intended to limit the scope of the present invention, but may be applicable in other applications. The illustrations reveal some details, it being understood that the details disclosed may differ from those disclosed, except in the case of expressly limited characteristics.

[0020] The starting point of the present invention is to clean the electrostatic chuck without moving the electrostatic chuck out and into the reaction chamber of the manufacturing process, so as to avoid several disadvantages that cannot be avoided by the conventional methods for cleaning the electrostatic chuck. In particular, since only contamination such as deposits occurring on the work surface on which the electrostatic chuck holds the workpiece affects the holding force between the electrostatic chuck and the work, only the work surface may be cleaned.

[0021] The basic concep...

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PUM

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Abstract

To provide a method of cleaning an electrostatic chuck. When any work pieces are not fixed to an absorption face of an electrostatic chuck, an ion beam is transmitted to the absorption face of electrostatic chuck, a physical collision and / or a chemical bond are / is generated by a correlation of a deposit of the ion beam and the absorption face, and the deposit is removed from the absorption face of electrostatic chuck. Current amount and energy amount of the ion beam and a kind of the ion are determined by a structure of the deposit, thickness, and a material of all deposit. When the ion beam of low energy amount is used, possibility of damage of the absorption face of electrostatic chuck is reduce. When an oxygen ion or an inactive gas ion is used, the deposit is removed and influence of a dielectric layer of the absorption face of electrostatic chuck is reduced.

Description

technical field [0001] The present invention relates to methods of cleaning electrostatic chucks, and more particularly to methods of delivering an ion beam to a work surface on which an electrostatic chuck holds a workpiece to remove deposits from the work surface. Background technique [0002] Ion implantation is to transfer dopants into materials to change the properties of materials, such as improving the conductivity of non-conductive materials by doping trivalent element ions and / or pentavalent element ions. In recent years, ion implantation has been widely used in manufacturing processes such as integrated circuits, memory, light-emitting diodes, solar cells, and flat-panel displays. [0003] When ion implantation is performed on a workpiece with an ion beam, if the cross-sectional area of ​​the ion beam is smaller than the surface area of ​​the workpiece (or the area of ​​the area to be treated on the working surface), the ion beam and the workpiece must intersect wi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B08B7/00B08B11/04H01L21/683
CPCB08B7/0035B08B11/04H01L21/6831H01J37/20H01J37/304H01J2237/022H01J2237/2002H01J2237/30466H01L21/6833H01L21/02046H01L21/265H01L21/6704B08B7/00H01J37/30H02N13/00
Inventor 倪玉河康畯钦杨捷仁
Owner ADVANCED ION BEAM TECHNOLOGY INC
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