Reduced graphene oxide-polyethyleneimine-cobalt trioxide oxide semiconductor composite material and its preparation method and application
A technology of oxide semiconductor and polyethyleneimine, which is applied in the direction of material resistance, analysis of materials, and electrochemical variables of materials, can solve the problems of low selectivity and low sensitivity, and achieve the effect of simple use and good crystallinity
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specific Embodiment approach 1
[0027] Specific Embodiment 1: In this embodiment, the reduced graphene oxide-polyethyleneimine-cobalt oxide semiconductor composite material is made of reduced graphene oxide, a directing agent, and a cobalt-containing material;
[0028] The mass ratio of the reduced graphene oxide to the directing agent is 1:(27-167); the mass ratio of the cobalt-containing material to the directing agent is 1:(0.4-3).
[0029] This embodiment has the following beneficial effects:
[0030] The reduced graphene oxide-polyethyleneimine-cobalt tetraoxide semiconductor oxide composite material of this embodiment is used as a sensitive material for detecting ammonia in the air. It does not require a heating system and can be used at room temperature, that is, 20°C to 30°C, and the humidity is Operating under the condition of 25% to 35%, the molar concentration of ammonia detected is as low as 0.03ppm, the sensitivity is higher than 14.3%, and the method of use is simple;
[0031] Co 3 o 4 The p...
specific Embodiment approach 2
[0032] Embodiment 2: This embodiment is different from Embodiment 1 in that: the directing agent is polyethyleneimine. Other steps and parameters are the same as those in the first embodiment.
specific Embodiment approach 3
[0033] Specific embodiment three: the difference between this embodiment and specific embodiment one or two is that: the cobalt-containing material is cobalt nitrate hexahydrate, and the molecular formula of cobalt nitrate hexahydrate is Co(NO 3 ) 2 ·6H 2 O. Other steps and parameters are the same as those in Embodiment 1 or 2.
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