Unlock instant, AI-driven research and patent intelligence for your innovation.

Boron-nitrogen nanowire/semiconductor oxide composite and preparation method thereof

A composite material and nanowire technology, which is applied in the field of nanomaterial/oxide composite material and its preparation, can solve the problems of no nitrogen oxide gas, low sensitivity boron nitrogen nanowire/semiconductor oxide composite material, etc., and achieve the use method simple effect

Inactive Publication Date: 2012-07-25
HEILONGJIANG UNIV
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The present invention aims to solve the problems that the existing sensitive materials for detecting nitrogen oxides have low sensitivity at room temperature and the boron nitrogen nanowire / semiconductor oxide composite material is not used as a sensitive material for detecting nitrogen oxides in the air. Provide boron nitrogen nanowire / semiconductor oxide composite material and its preparation method

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Boron-nitrogen nanowire/semiconductor oxide composite and preparation method thereof
  • Boron-nitrogen nanowire/semiconductor oxide composite and preparation method thereof
  • Boron-nitrogen nanowire/semiconductor oxide composite and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

specific Embodiment approach 1

[0015] Embodiment 1: The boron-nitrogen nanowire / semiconductor oxide composite material of this embodiment is made of boron-nitrogen nanowire, transition metal salt and precipitant; wherein the mass ratio of boron-nitrogen nanowire to transition metal salt is 1:2~ 25. The molar ratio of the transition metal salt to the precipitating agent is 1:1-5; the boron-nitrogen nanowire is composed of 1 part by mass of catalyst and 3-6.5 parts of boron-containing material in an ammonia atmosphere made.

[0016] The boron-nitrogen nanowire / semiconductor oxide composite material of this embodiment is used as a sensitive material for the detection of nitrogen oxide gas. The molar concentration of nitrogen oxide gas that can be detected at room temperature is as low as 48.5ppb. The sensitivity is higher than 10%, the adsorption reversibility is strong, and the stability is good.

specific Embodiment approach 2

[0017] Specific embodiment two: the difference between this embodiment and specific embodiment one is: the catalyst is α-Fe 2 o 3 or γ-Fe 2 o 3 . Others are the same as in the first embodiment.

specific Embodiment approach 3

[0018] Embodiment 3: The difference between this embodiment and Embodiment 1 or 2 is that the boron-containing material is amorphous boron powder, crystalline boron powder or boric acid. Others are the same as in the first or second embodiment.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Sensitivityaaaaaaaaaa
diameteraaaaaaaaaa
diameteraaaaaaaaaa
Login to View More

Abstract

The invention provides a boron-nitrogen nanowire / semiconductor oxide composite and a preparation method and application thereof, relating to a nano material / oxide composite and a preparation method and application thereof. The invention solves the problem that the current sensitive materials used for detecting oxynitride gases have low sensitivity at room temperature. The composite of the invention is prepared by boron-nitrogen nanowires, transition metal salts and a precipitant, wherein the boron-nitrogen nanowires are prepared by a catalyst and boron-containing materials in the ammonia atmosphere. The preparation method is characterized in that the catalyst and the boron-containing materials are used for synthesizing the boron-nitrogen nanowires in the ammonia atmosphere at high temperature after being ground, then the boron-nitrogen nanowires are purified and dispersed into metal nitrate solution, and then the boron-nitrogen nanowires are modified by the precipitant, and then the modified boron-nitrogen nanowires are dried and sintered to obtain the boron-nitrogen nanowire / semiconductor oxide composite. The composite of the invention is applied to detecting the oxynitride gasesas a sensitive material. The molarity of the oxynitride gases which can be detected by the material at room temperature is as low as 48.5ppb and the sensitivity of the material is not less than 10%. The composite has high sensitivity and good stability.

Description

technical field [0001] The invention relates to a nanometer material / oxide composite material and a preparation method thereof. Background technique [0002] With the development of industrial production and the increase of motor vehicles, the amount of nitrogen oxide gases, such as NO and NO, discharged into the atmosphere by humans is increasing day by day 2 , which makes the space pollution of people's lives more and more serious. In addition, nitrogen oxides often exist in the airtight compartments of spacecraft, submarines, high-speed railways, and intercity railways in the fields of aerospace and national defense technology. The nitrogen oxide content in these places is monitored in real time. Existing tin dioxide-modified carbon nanotubes are used as sensitive materials for detecting nitric oxide gas, and its minimum detection limit is 2ppm, and sensitivity is 1.93%, and working temperature is about 300 ℃; Other metal oxides (such as WO 3 etc.) modified carbon nanot...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G01N27/04
Inventor 史克英付宏刚夏廷亮张连萍刘艳伟
Owner HEILONGJIANG UNIV
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com