Multiple quantum well structure and light-emitting diode thereof

A multi-quantum well structure and light-emitting diode technology, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of loss of light efficiency, inability to change the energy band distortion of the active layer, increase the thickness of the cap layer, etc., and improve the quality of the crystal , Improve large electron overflow, improve the effect of high voltage

Active Publication Date: 2017-08-22
ANHUI SANAN OPTOELECTRONICS CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] At present, in order to improve the resistance of the epitaxial barrier crystal layer to high current and alleviate and overcome the influence of the Droop effect, most epitaxial structure designs adopt the design of an optimized electron blocking layer after the active layer, such as AlGaN with a graded Al composition. Single layer, or electron blocking layer of superlattice structure, such as AlGaN / GaN SLs, AlN / GaN SLs, and AlN / AlGaNSLs, but the design of these epitaxial barrier crystal layer structures cannot change the energy band distortion inside the active layer, While improving the electron overflow, it also increases the thickness of the cap layer, resulting in the loss of light efficiency

Method used

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  • Multiple quantum well structure and light-emitting diode thereof
  • Multiple quantum well structure and light-emitting diode thereof
  • Multiple quantum well structure and light-emitting diode thereof

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Embodiment 1

[0032] See attached figure 1 , a multi-quantum well structure 100, comprising a stress release layer 110, an electron collection layer 120, and a light emitting layer 130, the light emitting layer 130 comprising several alternately grown barrier layers and potential well layers, wherein at least one barrier layer is GaN / al x In y Ga (1-x-y) N / GaN structure, 0x1 N / GaN structure, where, 0.05≤x 1 ≤0.20, further 0.1≤x 1 ≤0.15, its thickness is 140Å~190Å, while Al x1 The thickness of the N layer is 20Å~30Å.

[0033] The electron collection layer 120 includes several alternately stacked GaN barrier layers and InGaN well layers, and the number of cycles is 3 to 6. In order to slow down the electron mobility, an AlGaN layer is inserted into the last GaN barrier layer of the electron collection layer 120 to form a GaN / AlGaN / GaN structure of the last barrier layer, the insertion of the AlGaN layer not only improves the low efficiency of the internal quantum well and the Droop ef...

Embodiment 2

[0038] See attached image 3 , the multi-quantum well structure 100 includes a stress release layer 110, an electron collection layer 120, and a light-emitting layer 130, and the light-emitting layer 130 includes several alternately grown barrier layers and potential well layers, wherein at least one barrier layer is GaN / Al x In y Ga (1-x-y) N / GaN structure, 0x2 In y2 Ga (1-x2-y2) N / GaN structure, the barrier layer of the second light-emitting layer 132 is a GaN structure, 0x2 Ga (1-x2) N / GaN structure, where 0.02≤x2≤0.06. The period number of the first light-emitting layer 131 is 4-8, and the period number of the second light-emitting layer 132 is 5-10.

[0039] Setting the barrier layer in the first light-emitting layer 131 to multiple groups of low Al components can first slow down the phenomenon of electron overflow under high current density, greatly increase the probability of effective recombination radiation of electron holes in the light-emitting layer 130, and i...

Embodiment 3

[0044] See attached Figure 5 , the multi-quantum well structure 100 layer includes a stress release layer 110, an electron collection layer 120, an electron trench layer 140, and a light-emitting layer 130, and the light-emitting layer 130 includes several alternately grown barrier layers and potential well layers, wherein at least one potential barrier layer is GaN / Al x In y Ga (1-x-y) N / GaN structure, 0x2 In y2 Ga (1-x2-y2) N / GaN structure, the potential well layer is an InGaN structure; the last potential barrier layer of the second light emitting layer 132 is the last potential barrier layer is GaN / Al x1 N / GaN structure, where, 0.1≤x1≤0.15, its thickness is 80Å~120Å, and Al x1 The thickness of the N layer is 20Ř30Å, the barrier layers of the remaining second light emitting layer 132 are GaN structures, and the potential well layers are all InGaN structures. Preferably, the barrier layer of the first light-emitting layer 131 is GaN / Al x2 Ga (1-x2) N / GaN structure,...

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Abstract

The invention relates to the field of semiconductor technologies, in particular to a multiple quantum well structure and a light-emitting diode thereof. The multiple quantum well structure comprises a stress release layer, an electron collecting layer and a light emitting layer, wherein the light emitting layer comprises a plurality of potential barrier layers and potential well layers which grow alternately, at least one potential barrier layer is of a GaN/AlxInyGa(1 x y)N/GaN structure, 0<x<=1, 0<=y<1, and the rest potential barrier layers are of a GaN structure. The light-emitting diode at least comprises a substrate, and a buffer layer, an N-type layer, a multiple quantum well structure layer, an electron blocking layer, a P-type layer and a P-type contact layer which are arranged on the substrate sequentially. According to the multiple quantum well structure and the light-emitting diode thereof, the potential barrier layers with a forbidden bandwidth higher than the GaN are arranged in layers of the multiple quantum well structure, namely, an electron blocking layer in the existing structure is dispersed in the multiple quantum well structure layer, thereby achieving the effect of blocking electrons in a dispersed manner, enhancing the electronic blocking effect, reducing the electron overflow phenomenon at high current density and the resulting Droop effect, and improving light-emitting efficiency of the light-emitting diode.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to a multi-quantum well structure and a light-emitting diode thereof. Background technique [0002] As the LED industry is becoming more and more perfect, the design and development of LED white light lighting products with high current density and high brightness devices are becoming more and more intense. At the same time, in order to increase the demand for market competitiveness, under the premise of maintaining product performance, especially the brightness level, the degree of gradually reducing the size is becoming more and more intense, which further increases the demand for high current density tolerance in the design of the epitaxial layer structure, especially the need to overcome The impact of the Droop effect. [0003] At present, in order to improve the resistance of the epitaxial barrier crystal layer to high current and alleviate and overcome the ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/06H01L33/22H01L33/32
CPCH01L33/06H01L33/22H01L33/32H01L33/12H01L33/0075
Inventor 江汉蓝永凌黄文宾宋长伟黄理承寻飞林林兓兓蔡吉明张家宏
Owner ANHUI SANAN OPTOELECTRONICS CO LTD
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