Advanced process flow for high quality fcvd films

Abstract

Embodiments described herein relate to methods for forming flowable chemical vapor deposition (FCVD) films suitable for high aspect ratio gap fill applications. Various process flows described include ion implantation processes utilized to treat a deposited FCVD film to improve dielectric film density and material composition. Ion implantation processes, curing processes, and annealing processes may be utilized in various sequence combinations to form dielectric films having improved densities at temperatures within the thermal budget of device materials. Improved film quality characteristics include reduced film stress and reduced film shrinkage when compared to conventional FCVD film formation processes.

Description

[0001] background technical field [0002] Embodiments of the present disclosure generally relate to methods for forming dielectric materials on substrates. More specifically, embodiments provided herein provide process flows for forming high quality flow chemical vapor deposition (FCVD) films. Background technique [0003] In semiconductor processing, devices are fabricated with continuously decreasing feature sizes. Typically, the features used to fabricate components at these advanced technology nodes include high aspect ratio structures, and often the gaps between the high aspect ratio structures must be filled with insulating materials. Examples of insulating materials used in gap fill applications include shallow trench isolation, intermetal dielectric layers, passivation layers, patterning applications, and the like. Due to shrinking device geometries and lower thermal budgets, it becomes increasingly difficult to fill high aspect ratio spaces without voids due to ...

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Problems solved by technology

These temperatures often exceed the thermal budget of the device material and may not be suitable for the desired application

In addition, the high temperature annealing process can cause film shrinkage and undesired tensile stress in the film, which can cause device defects

Finally, conventional FCVD processes often suffer from latency inefficiencies when a dielectric film consisting primarily of oxides is desired

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