Radio frequency power amplifier

A power amplifier and radio frequency power technology, applied in the field of microelectronics, can solve the problems of complex chip structure and high cost, and achieve the effect of reducing cost and simplifying the structure.
CN107124146AInactive Publication Date: 2017-09-01ETRA SEMICON SUZHOU CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
ETRA SEMICON SUZHOU CO LTD
Publication Date
2017-09-01
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention provides a radio frequency power amplifier. The radio frequency power amplifier comprises a radio frequency amplification path; the radio frequency amplification path comprises a multi-stage amplification circuit; and the multi-stage amplification circuit comprises an input radio frequency gating switch, a driving-stage amplifier, a stage matching network, an outputting-stage amplifier, an output matching network and an output gating network. The outputting-stage amplifier comprises first power amplifiers and second power amplifiers; the output matching network comprises first impedance converters and first transformers; one first power amplifier, one second power amplifiers and one first impedance converter compose a differential amplifier unit; and multiple differential amplifier units are provided, and the multiple differential amplifier units are connected in parallel. Through controlling the opening number of the differential amplifier units, switching of different power levels is realized, full coverage for high, intermediate and low frequency bands of 2G / 2G / 4G is accordingly achieved, and the cost of the radio frequency power amplifier is reduced.
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Description

technical field

[0001] The invention relates to the technical field of microelectronics, in particular to a radio frequency power amplifier. Background technique

[0002] In the prior art, a multi-mode multi-frequency (MMMB, Multi-Mode Multi-Band) radio frequency front-end chip for 2G, 3G, 4G modes includes a GSM high-band radio frequency power amplifier, a GSM low-band radio frequency power amplifier, a 3G / 4G low-band (700MHz-915MHz) RF power amplifier, 3G / 4G mid-band (1710MHz-2025MHz) RF power amplifier, output matching network of each RF power amplifier, MIPI interface and controller, input channel selection switch, output frequency band selection Switches, RF antenna switches, 3G / 4G high-band RF antenna switches, etc. The two duplexer groups are located outside the MMMB radio frequency front-end chip, and are connected to the corresponding ports of the internal output frequency band selection switch and the radio frequency antenna switch to realize the different FDD (F...

Claims

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