Radio frequency power amplifier

A power amplifier and radio frequency power technology, applied in the field of microelectronics, can solve the problems of complex chip structure and high cost, and achieve the effect of reducing cost and simplifying the structure.

Inactive Publication Date: 2017-09-01
ETRA SEMICON SUZHOU CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In view of this, the present invention provides a radio frequency power amplifier, to solve the complex structure and hi

Method used

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Embodiment Construction

[0028] As mentioned in the background technology section, the multi-mode multi-frequency radio frequency front-end chip in the prior art has a complex structure and high cost, resulting in a complex structure and high cost of the radio frequency power amplifier.

[0029] In the prior art, the radio frequency power amplifier is an essential key component in various wireless communication applications, and is used to amplify the power of the modulated radio frequency signal output by the transceiver, so as to meet the power requirement of the radio frequency signal required by wireless communication.

[0030] At present, 3G and 4G mobile communications have been deployed and applied more and more around the world, but as the most widely deployed and most mature mobile communication standard, 2G GSM is still the communication mode that all mobile terminals need to support. Uplink communication in 2G GSM communication mode includes 4 frequency bands, namely: GSM850: 824MHz-849MHz; ...

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Abstract

The invention provides a radio frequency power amplifier. The radio frequency power amplifier comprises a radio frequency amplification path; the radio frequency amplification path comprises a multi-stage amplification circuit; and the multi-stage amplification circuit comprises an input radio frequency gating switch, a driving-stage amplifier, a stage matching network, an outputting-stage amplifier, an output matching network and an output gating network. The outputting-stage amplifier comprises first power amplifiers and second power amplifiers; the output matching network comprises first impedance converters and first transformers; one first power amplifier, one second power amplifiers and one first impedance converter compose a differential amplifier unit; and multiple differential amplifier units are provided, and the multiple differential amplifier units are connected in parallel. Through controlling the opening number of the differential amplifier units, switching of different power levels is realized, full coverage for high, intermediate and low frequency bands of 2G/2G/4G is accordingly achieved, and the cost of the radio frequency power amplifier is reduced.

Description

technical field [0001] The invention relates to the technical field of microelectronics, in particular to a radio frequency power amplifier. Background technique [0002] In the prior art, a multi-mode multi-frequency (MMMB, Multi-Mode Multi-Band) radio frequency front-end chip for 2G, 3G, 4G modes includes a GSM high-band radio frequency power amplifier, a GSM low-band radio frequency power amplifier, a 3G / 4G low-band (700MHz-915MHz) RF power amplifier, 3G / 4G mid-band (1710MHz-2025MHz) RF power amplifier, output matching network of each RF power amplifier, MIPI interface and controller, input channel selection switch, output frequency band selection Switches, RF antenna switches, 3G / 4G high-band RF antenna switches, etc. The two duplexer groups are located outside the MMMB radio frequency front-end chip, and are connected to the corresponding ports of the internal output frequency band selection switch and the radio frequency antenna switch to realize the different FDD (F...

Claims

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Application Information

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IPC IPC(8): H03F3/189H03F3/24H03F3/45H03F1/56
CPCH03F1/565H03F3/189H03F3/24H03F3/45
Inventor 贲志红黄清华程忍刘海玲
Owner ETRA SEMICON SUZHOU CO LTD
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