A kind of preparation method of nano-silicon-based graphene solar cell
A solar cell and graphene technology, applied in the field of solar cells, can solve the problems of large leakage current, unfavorable high-performance photovoltaic devices, and small effective junction area, so as to reduce the recombination probability, improve lighting efficiency, and increase the effective junction area Effect
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Embodiment 1
[0021] Divide the area to 1.2×1.2cm 2 The monocrystalline silicon wafers were ultrasonically cleaned with ethanol and deionized water for 10 minutes in turn, and the silicon wafers were sealed with glue, leaving 1×1cm 2 The window, and then soaked in 1wt% HF acid solution for 60min to remove the oxide layer on the window surface; metal nanoparticle-assisted etching method was used to introduce silicon nanoparticles with a length of 0.1μm and a diameter of 10nm on the window surface with a sub-wavelength structure Line array (in this embodiment, Cu nanoparticles are used to assist etching, and the SEM characterization is as follows figure 2 shown), the distance between the nanowires is about 50nm; the silicon nanowire array is passivated with 5wt% iodine for 10min to form a 20nm passivation layer; the PdCl 2 Dissolve in 0.1wt% HF acid to make 1μmol / L PdCl 2 / HF acid solution, depositing by chemical deposition for 50s, forming Pd quantum dot modification on the surface of sil...
Embodiment 2
[0023] Divide the area to 1.2×1.2cm 2 The monocrystalline silicon wafers were ultrasonically cleaned with ethanol and deionized water for 10 minutes in turn, and the silicon wafers were sealed with glue, leaving 1×1cm 2 The window is then soaked in 40wt% HF acid solution for 1min to remove the oxide layer on the window surface; the metal nanoparticle-assisted etching method is used to introduce silicon nanowires with a length of 5 μm and a diameter of 50 nm on the window surface with a sub-wavelength structure Array (in this embodiment, Ag nanoparticles are used to assist etching, and the SEM characterization is as follows image 3 shown), the distance between the nanowires is about 300nm; the silicon nanowire array is passivated with 5wt% iodine for 6min to form a passivation layer of 10nm; the AgNO 3 Dissolved in 10wt% HF acid to make 1mmol / L AgNO 3 / HF acid solution, deposited by chemical deposition for 5s, forming Ag quantum dot modification on the surface of silicon nano...
Embodiment 3
[0025] Divide the area to 1.2×1.2cm 2 The monocrystalline silicon wafers were ultrasonically cleaned with ethanol and deionized water for 10 minutes in turn, and the silicon wafers were sealed with glue, leaving 1×1cm 2 The window is then immersed in 20wt% HF acid solution for 30min to remove the oxide layer on the window surface; metal nanoparticle assisted etching method is used to introduce silicon nanowires with a length of 5 μm and a diameter of 200nm on the window surface with a sub-wavelength structure Array, the spacing between nanowires is about 700nm; a layer of 100nm Al is formed on the surface of nanowires by vacuum evaporation method 2 o 3 passivation layer; the KAuCl 4 Dissolved in 20wt% HF acid to make 1mol / L KAuCl 4 / HF acid solution, deposited by chemical deposition method for 200s, forming Au quantum dot modification on the surface of silicon nanowires, the diameter of Au quantum dots is 30nm; dispersing graphene fragments with a diameter of 1 μm in ethano...
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Abstract
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