Te-In-Hg photoelectronic detector chip manufacture method
A technology for photodetectors and manufacturing methods, which is applied in the direction of circuits, electrical components, semiconductor devices, etc., can solve the problems of poor uniformity of oxide films, inconformity with insulating layers, and poor temperature stability of film layers, etc., to achieve good uniformity and good The effect of satisfying dielectric properties and electrical properties
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Embodiment 1
[0021] The mercury indium telluride wafer 1 is firstly cleaned with bromomethanol, and then rinsed with methanol and deionized water (step a in FIG. 1 ).
[0022] Place the surface-cleaned mercury indium mercury telluride wafer into the reaction chamber of PECVD, evacuate high vacuum (1 Pa) and heat the wafer to a temperature of 150 ° C, and feed 20 sccm nitrous oxide (N 2O) and after the radio frequency electric field frequency is 13.56MHz and the power is 30W discharge ionization for 2 minutes, an oxide layer with a thickness of 15nm is an oxide film.
[0023] 16 sccm of silane (SiH 4 ) and 20sccm nitrous oxide (N 2 O) grow a layer of silicon dioxide (SiO2) with a thickness of 250nm 2 ) film as a passivation protection film (step b in Figure 1).
[0024] Using photolithography technology and wet etching process, open a window to remove the passivation layer of the Schottky contact window of the detector (step c in FIG. 1 ).
[0025] Using the PECVD method again, the samp...
Embodiment 2
[0030] The mercury indium telluride chip was first cleaned with bromomethanol, and then rinsed with methanol and deionized water.
[0031] The surface-cleaned mercury indium mercury telluride wafer is placed in the reaction chamber of PECVD, vacuumizes and heats the wafer to a temperature of 160° C., and feeds 80 sccm oxygen (O 2 ) and an oxide layer with a thickness of 15nm is formed as an oxide film after the electric field frequency of the radio frequency is 13.56MHz and the power is 30W discharge ionization for 4 minutes.
[0032] Grown silicon dioxide (SiO 2 ) Thin film method is as embodiment 1.
[0033] The passivation layer of the schottky contact area of the detector is removed by photolithography technology and wet etching process.
[0034] Using the PECVD method again, the sample is heated to a temperature of 100° C., and 80 sccm of oxygen (O 2 ) and discharge and ionize at a power of 30W for 6 minutes at a radio frequency electric field frequency of 13.56MHz t...
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