Quantum dot sensitized solar cell and preparation method thereof

A solar cell and quantum dot sensitization technology, which is applied in the field of solar cell materials, can solve problems such as increasing battery leakage current and reducing the flatness of photoanode film, and achieves increasing fill factor, improving photoelectric conversion efficiency, and photocurrent value Enhanced effect

Inactive Publication Date: 2012-06-27
SOUTHEAST UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The graphite-doped composite film will reduce the flatness of the photoanode film to a certain extent, thereby increasing the leakage current of the battery.

Method used

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  • Quantum dot sensitized solar cell and preparation method thereof
  • Quantum dot sensitized solar cell and preparation method thereof
  • Quantum dot sensitized solar cell and preparation method thereof

Examples

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Embodiment 1

[0028] A quantum dot sensitized solar cell, comprising: a conductive substrate 1, graphene 2, nano semiconductor material 3, CdSe quantum dot particles 4, an electrolyte 5 and a counter electrode 6. Graphene 2 and nano-semiconductor material 3 are doped in proportion to obtain a graphene-doped nano-semiconductor crystal film, the mass of graphene accounts for 0.1% of the mass of the nano-semiconductor material, and CdSe quantum dot particles 4 are adsorbed on graphene 2 and nano-semiconductor material 3, the preparation method is as follows:

[0029] (1) Preparation of graphene: at room temperature, 50 mL of H 2 SO 4 Added to 2 g of graphite and mixed; due to concentrated H 2 SO 4 The reaction with graphite is an exothermic reaction, and 10 g KMnO 4 Slowly add the powder into the graphite at a rate of 0.5-1.5g / min, because heat is released during the reaction, wait for the temperature to cool down to room temperature, then heat the mixture, continue stirring at 35 °C for 2...

Embodiment 2

[0037] A quantum dot sensitized solar cell, comprising: a conductive substrate 1, graphene 2, nano semiconductor material 3, CdS quantum dot particles 4, an electrolyte 5 and a counter electrode 6. Graphene 2 and nano-semiconductor material 3 are doped in proportion to obtain a graphene-doped nano-semiconductor crystal film, the mass of graphene accounts for 0.01% of the mass of the nano-semiconductor material, and CdS quantum dot particles 4 are adsorbed on graphene 2 and nano-semiconductor material. On the composite film of semiconductor material 3, the preparation method is as follows:

[0038] (1) Preparation of graphene: at room temperature, 40 mL of H 2 SO 4 Added to 2 g of graphite and mixed; under ice bath conditions, 8 g of KMnO 4 The powder was slowly added to the graphite powder, waited for the temperature to cool down to room temperature, and the mixture was continuously stirred at 35 °C for 1 h, then cooled in an ice bath, and then diluted with 350 mL of deioniz...

Embodiment 3

[0044] A quantum dot sensitized solar cell, comprising: a conductive substrate 1, graphene 2, nano semiconductor material 3, CdTe quantum dot particles 4, an electrolyte 5 and a counter electrode 6. Graphene 2 and nano-semiconductor material 3 are doped in proportion to obtain a graphene-doped nano-semiconductor crystal film, the mass of graphene accounts for 1% of the mass of the nano-semiconductor material, and CdTe quantum dot particles 4 are adsorbed on graphene 2 and nano-semiconductor material 3, the preparation method is as follows:

[0045] (1) Firstly, the oxidized graphene prepared by the chemical method: at room temperature, 60 mL of H 2 SO 4 Added to 2 g graphite and mixed; under ice bath conditions, 7 g KMnO 4 The powder was slowly added to the graphite powder, waited for the temperature to cool to room temperature, and the mixture was continuously stirred at 40 °C for 2 h, then cooled in an ice bath, and then diluted with 350 mL of deionized water. Then use 30...

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Abstract

The invention relates to a quantum dot sensitized solar cell and a preparation method thereof. The quantum dot sensitized solar cell comprises a conductive substrate, nano semiconductor materials, an electrolyte and a counter electrode. Besides, the quantum dot sensitized solar cell also comprises graphene and quantum dot particles. The graphene and the nano semiconductor materials are doped in proportion, so that a graphene-doped nano semiconductor crystal film is obtained, wherein the mass of the graphene accounts for 0.01% to 10% of the mass of the nano semiconductor materials. The quantum dot particles are absorbed on the nano semiconductor crystal film by employing an electrophoresis method. The voltage is in a range of from 10-60V; a range of a ratio of a used toluene solvent to a used acetonitrile solvent is 10:1 to 1:10; and molar concentration of the quantum dots is 0.01 to 1M. According to the invention, the low voltage electrophoresis method is employed; therefore, a flat light anode film can be obtained and absorption thickness of the quantum dots on a composite film can be controlled; and meanwhile, an optical current value can be improved, so that general photoelectric conversion efficiency of the battery can be improved.

Description

technical field [0001] The invention belongs to the field of solar cell materials, and in particular relates to a quantum dot sensitized solar cell and a preparation method thereof. Background technique [0002] With the rapid development of the economy, the human demand for energy is increasing. As a clean and renewable energy source, solar energy has attracted widespread attention. Research groups from various countries have started research on the third generation of solar cells—dye-sensitized solar cells, whose photoelectric conversion efficiency exceeds 11%, and various technical indicators are already very close to the requirements of practical applications. In recent years, as substitutes for dyes, various quantum dot materials have been developed for use in solar cells. Compared with dyes, quantum dots have the following advantages: 1. Lower cost; 2. Higher extinction coefficient and suitable energy band position, which can transfer electrons to the conduction band...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01G9/042H01G9/20H01M14/00H01L31/0224H01L31/18
CPCY02P70/50
Inventor 陈静雷威张晓兵娄朝刚
Owner SOUTHEAST UNIV
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