Te-In-Hg photoelectronic detector chip manufacture method
A technology of photodetector and manufacturing method, applied in circuits, electrical components, semiconductor devices, etc., can solve the problems of non-conformance of insulating layers, poor uniformity of oxide films, poor temperature stability of films, etc., and achieve good dielectric properties, Good uniformity and satisfactory electrical properties
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Embodiment 1
[0021] The mercury indium telluride wafer 1 is first cleaned with bromomethanol, rinsed with methanol and deionized water ( figure 1 In step a).
[0022]Place the surface-cleaned mercury indium mercury telluride wafer into the reaction chamber of PECVD, evacuate high vacuum (1 Pa) and heat the wafer to a temperature of 150 ° C, and feed 20 sccm nitrous oxide (N 2 O) and after the radio frequency electric field frequency is 13.56MHz and the power is 30W discharge ionization for 2 minutes, an oxide layer with a thickness of 15nm is an oxide film.
[0023] 16sccm of silane (SiH4) and 20sccm of nitrous oxide (N 2 O) grow a layer of silicon dioxide (SiO2) with a thickness of 250nm 2 ) film as a passivation protective film ( figure 1 In step b).
[0024] Using photolithography technology and wet etching process, open the window to remove the passivation layer of the Schottky contact window of the detector ( figure 1 In step c).
[0025] Using the PECVD method again, the sample...
Embodiment 2
[0030] The mercury indium telluride chip was first cleaned with bromomethanol, and then rinsed with methanol and deionized water.
[0031] The surface-cleaned mercury indium mercury telluride wafer is placed in the reaction chamber of PECVD, vacuumizes and heats the wafer to a temperature of 160° C., and feeds 80 sccm oxygen (O 2 ) and an oxide layer with a thickness of 15nm is formed as an oxide film after the electric field frequency of the radio frequency is 13.56MHz and the power is 30W discharge ionization for 4 minutes.
[0032] Grown silicon dioxide (SiO 2 ) Thin film method as embodiment 1.
[0033] The passivation layer of the schottky contact area of the detector is removed by photolithography technology and wet etching process.
[0034] Using the PECVD method again, the sample is heated to a temperature of 100° C., and 80 sccm of oxygen (O 2 ) and discharge and ionize at a power of 30W for 6 minutes at a radio frequency electric field frequency of 13.56MHz to f...
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