Unlock instant, AI-driven research and patent intelligence for your innovation.

Composite anti-reflection film, solar cell and preparation for improving performance of graphene Schottky junction solar cell

A technology of Schottky junction and solar cells, which is applied in the field of solar cells, can solve the problems of insufficient short-circuit circuit density of cells and lower solar light absorption efficiency, etc., and achieve improved photoelectric conversion efficiency, low device manufacturing process cost, and improved Xiao The effect of the teky barrier

Active Publication Date: 2020-12-22
SOUTH CHINA UNIV OF TECH
View PDF9 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, conventional graphene Schottky junction solar cells reduce the absorption efficiency of sunlight due to the reflection of sunlight on the GaAs surface, so the short circuit density of the battery is not high enough. Therefore, how to improve the solar spectrum of solar cells The absorption efficiency has important practical value for improving the short-circuit current density of solar cells and thus improving the photoelectric conversion efficiency of the cells.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Composite anti-reflection film, solar cell and preparation for improving performance of graphene Schottky junction solar cell
  • Composite anti-reflection film, solar cell and preparation for improving performance of graphene Schottky junction solar cell

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] The graphene-GaAs Schottky junction solar cell including the composite anti-reflection film in this embodiment includes bottom electrode gold, GaAs epitaxial wafer, graphene, conductive silver glue top electrode, molybdenum trioxide and zirconium oxide from bottom to top.

[0034] The preparation method of the graphene Schottky junction solar cell comprising composite antireflection film, comprises the following steps:

[0035] (1) Preparation of the back electrode: fix a 2-inch GaAs substrate on a disk, and use an electron beam evaporation system to evaporate a layer of Au electrode on the back of the GaAs substrate. The evaporation temperature is 40 ° C, and the evaporation time is After 30 minutes, the thickness of the Au electrode is 120 nanometers; the GaAs substrate is an N-type GaAs sheet, and the doping concentration is 1×10 17 ~4×10 18 cm -3 ;

[0036] (2) Cutting: the GaAs substrate evaporated with a back electrode is cut into a sheet with a size of one squ...

Embodiment 2

[0045] The graphene-GaAs Schottky junction solar cell including the composite anti-reflection film of this embodiment includes bottom electrode gold, GaAs substrate, graphene layer, top electrode, molybdenum trioxide layer and zirconium oxide layer in sequence from bottom to top.

[0046] The preparation method of the graphene Schottky junction solar cell comprising composite antireflection film, comprises the following steps:

[0047] (1) Preparation of the back electrode: fix a 2-inch GaAs substrate on a disc, and use an electron beam evaporation system to evaporate a layer of Au electrode on the back of the GaAs substrate. The evaporation temperature is 50 ° C, and the evaporation time is For 40 minutes, the thickness of the Au electrode was 150 nanometers; the GaAs substrate was an N-type GaAs sheet, and the doping concentration was 1×10 17 ~4×10 18 cm -3 ;

[0048] (2) Transferred graphene: Graphene is grown on a copper foil substrate by chemical vapor deposition. The ...

Embodiment 3

[0052] The structural representation of the graphene-GaAs Schottky junction solar cell comprising the composite antireflection film of the present embodiment includes bottom electrode gold, GaAs substrate, graphene layer, molybdenum trioxide layer, zirconium oxide layer and top electrode.

[0053] The preparation method of the graphene Schottky junction solar cell comprising composite antireflection film, comprises the following steps:

[0054] (1) Preparation of the back electrode: fix a 2-inch GaAs substrate on a disk, and use an electron beam evaporation system to evaporate a layer of Au electrode on the back of the GaAs substrate. The evaporation temperature is 60 ° C, and the evaporation time is After 20 minutes, the thickness of the Au electrode is 80 nanometers; the GaAs substrate is an N-type GaAs sheet, and the doping concentration is 1×10 17 ~4×10 18 cm -3 ;

[0055] (2) Transferred graphene: Graphene is grown on a copper foil substrate by chemical vapor depositi...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention belongs to the technical field of solar cells, and discloses a composite anti-reflection film for improving performance of a graphene Schottky junction solar cell, the solar cell and preparation of the solar cell. The composite anti-reflection film comprises a MoO3 layer and a ZrO2 layer which are sequentially laminated, wherein the MoO3 layer is arranged on a graphene layer of the graphene Schottky junction solar cell. The graphene Schottky junction solar cell sequentially comprises a bottom electrode, a GaAs substrate, a graphene layer, a top electrode, the MoO3 layer and the ZrO2 layer from bottom to top. The composite anti-reflection film is introduced into the graphene Schottky junction solar cell, the open-circuit voltage of the cell is increased, and the short-circuitcurrent of the solar is effectively increased. The method is simple and effective and is low in cost, and the photoelectric conversion efficiency of the cell is obviously improved by introduction of the composite anti-reflection film.

Description

technical field [0001] The invention belongs to the technical field of solar cells, and in particular relates to a composite antireflection film for improving the performance of a graphene Schottky junction solar cell, a graphene Schottky junction solar cell and a preparation method thereof. Background technique [0002] Graphene is a honeycomb-shaped planar film formed by carbon atoms. It has the characteristics of high electrical conductivity, high light transmittance, and adjustable work function. It is widely used in solar cells. Graphene has metal-like properties, and its work function is greater than that of GaAs. It can form a Schottky contact with GaAs, and a solar cell can be prepared by using a Schottky junction. Graphene-GaAs Schottky junction solar cells have the advantages of simple process and low cost compared with mainstream silicon solar cells, and have good application prospects. However, conventional graphene Schottky junction solar cells reduce the absor...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0216H01L31/028H01L31/07H01L31/18
CPCH01L31/02168H01L31/028H01L31/07H01L31/1804Y02E10/547Y02P70/50
Inventor 张曙光温雷
Owner SOUTH CHINA UNIV OF TECH