Semiconductor device
A semiconductor and conductive layer technology, applied in semiconductor devices, semiconductor/solid-state device components, electric solid-state devices, etc., can solve the problem that semiconductor devices no longer operate normally
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no. 1 Embodiment approach
[0028] while referring to Figure 1 ~ Figure 4 , an example of the semiconductor device of the first embodiment will be described. figure 1 as well as figure 2 It is a perspective view of the semiconductor device 100 of the first embodiment.
[0029] image 3 It is an enlarged plan view showing a part of the semiconductor device 100 according to the first embodiment.
[0030] Figure 4 (a) is image 3 The A-A' profile of Figure 4 (b) is image 3 The BB' section view of Figure 4 (c) is image 3 The C-C' profile.
[0031] In addition, in figure 2 In , the sealing part 5, the emitter terminal E, the collector terminal C, and the gate terminal G are omitted.
[0032] Such as Figure 1 ~ Figure 4 As shown, the semiconductor device 100 has a substrate 1, a substrate 2, a sealing portion 5, a first conductive layer 11, a second conductive layer 12, a third conductive layer 13, a semiconductor chip 21 (first semiconductor chip), and a semiconductor chip 22 (second semi...
no. 2 Embodiment approach
[0069] use Figure 6 , an example of the semiconductor device of the second embodiment will be described.
[0070] Figure 6 It is an enlarged plan view showing a part of the semiconductor device 200 of the second embodiment.
[0071] The semiconductor device 200 differs from the semiconductor device 100 in that it further includes, for example, wirings 31 and 32 .
[0072] In this embodiment, the emitter electrodes E1 and E3 are short-circuited by the wiring 31 . That is, the emitter electrodes E1 and E3 are connected to the same potential via the second conductive layer 12 , but in the semiconductor device 200 , these electrodes are more directly short-circuited by the wiring 31 .
[0073] Likewise, the emitter electrodes E2 and E4 are directly short-circuited by the wiring 32 .
[0074] Here, while referring to Figure 7 Operations and effects brought about by the second embodiment will be described. Figure 7 It is an enlarged plan view showing a part of the semicond...
no. 3 Embodiment approach
[0082] use Figure 8 , an example of the semiconductor device of the third embodiment will be described.
[0083] Figure 8 It is an enlarged plan view showing a part of the semiconductor device 300 of the third embodiment.
[0084] The semiconductor device 300 differs from the semiconductor device 200 in, for example, the structure of the second conductive layer 12 .
[0085] The 2nd conductive layer 12 has the connection part 12a - the connection part 12d. However, unlike the semiconductor devices 100 and 200 , no gap is formed between the connection portion 12 a and the connection portion 12 c and between the connection portion 12 b and the connection portion 12 d. According to such a configuration, the resistance when current flows from the semiconductor chips 21 to 24 to the second conductive layer 12 through the connection portions 12a to 12d can be reduced, and power consumption of the semiconductor device can be reduced.
[0086] That is, according to this embodime...
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