A kind of thin film transistor, its manufacturing method and display device

Abstract

The invention relates to a thin-film transistor, its manufacturing method and a display device, which are used to solve the problem that in the existing flexible display screen, the thickness of the interlayer dielectric layer is relatively thick, which is easy to cause fracture during the bending process, resulting in the failure of the source-drain layer metal lines A disconnection problem occurred. The thin film transistor comprises: a substrate, an active layer disposed on the substrate, a source-drain layer, and an insulating layer disposed between the active layer and the source-drain layer; wherein the source-drain layer passes through the insulating layer The via hole on the upper layer is connected with the active layer; the material of the insulating layer includes a hydrogen storage material. In the thin film transistor of the present invention, an insulating layer made of a hydrogen storage material is arranged between the active layer and the source-drain layer, and the hydrogen atoms stored in the insulating layer can provide hydrogen atoms for the active layer, so subsequent layers can be omitted The production of the interlayer dielectric layer, and the flexible insulating layer is more flexible than the interlayer dielectric layer made of inorganic materials, and it is not easy to break when it is bent, so the yield of the product can be improved.

Description

technical field [0001] The invention relates to the technical field of thin film transistors, in particular to a thin film transistor, a manufacturing method thereof and a display device. Background technique [0002] Traditional displays are flat-panel displays, which cannot be bent at will. The future trend is to present a large amount of information on flexible bodies, that is, to display on flexible displays, that is, to realize flexible displays. The official definition of a flexible display is a display device whose display screen and module can be mechanically bent in any step of substrate packaging, production, storage, use, operation, process connection, handling, and transportation. In the existing LTPS (Low Temperature Poly-silicon, low temperature polysilicon) backplane preparation process, the interlayer dielectric layer arranged between the gate and the active layer in the thin film transistor, because it generally uses the inorganic material SiO-SiNx The dou...

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Problems solved by technology

[0004] The object of the present invention is to provide a thin film transistor, its manufacturing method and display device, which are used to solve the problem that in the existing flexible display screen, the thickness of the interlayer dielectric layer is relatively thick, and it is easy to cause fracture during the bending process, which in turn causes the source The metal line of the drain layer is disconnected, which affects the yield of the product

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