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A high breakdown field strength and energy storage density silicon dioxide doped copper cadmium titanate giant dielectric ceramic material and preparation method

A technology of ceramic materials and silicon dioxide, applied in circuits, capacitors, electrical components, etc., can solve the problem of low energy storage density, achieve low reaction temperature, strong practicability, and good repeatability

Active Publication Date: 2019-12-03
SHAANXI NORMAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, its energy storage density is low. How to improve the energy storage density of dielectric capacitors is a research hotspot and frontier in the field of solid-state supercapacitors.

Method used

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  • A high breakdown field strength and energy storage density silicon dioxide doped copper cadmium titanate giant dielectric ceramic material and preparation method
  • A high breakdown field strength and energy storage density silicon dioxide doped copper cadmium titanate giant dielectric ceramic material and preparation method
  • A high breakdown field strength and energy storage density silicon dioxide doped copper cadmium titanate giant dielectric ceramic material and preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] 1. According to CdCu 3 Ti 4 o 12 The stoichiometric ratio of 3.1159g Cd(NO 3 ) 2 4H 2 O, 7.3212g Cu(NO 3 ) 2 ·3H 2 O was added to the mixed solvent of 10mL absolute ethanol and deionized water to prepare solution A, and 13.8mL Ti(C 4 h 9 O) 4 Add it to 52.2mL of absolute ethanol to prepare solution B; mix solution A and solution B, and add 4mL of glacial acetic acid, the concentration of butyl titanate in the resulting mixed solution is 0.5mol / L, and the volume fraction of glacial acetic acid is 5.0 %, the volume fraction of deionized water is 10%, heated at 45°C and stirred evenly to obtain a sol, and continued to stir until the sol turned into a gel. After the gel was aged for 12 hours, it was dried at 100°C for 48 hours. A brownish blue loose xerogel is obtained; after the xerogel is ground, it is calcined at 650°C for 10 hours to obtain CdCu 3 Ti 4 o 12 Ceramic powder.

[0022] 2. To CdCu 3 Ti 4 o 12 Add 1.0% of its mass silica powder to the ceramic...

Embodiment 2

[0024] In this example, to CdCu 3 Ti 4 o 12 2.0% by mass of silicon dioxide powder was added to the ceramic powder, and the other steps were the same as in Example 1 to obtain a silicon dioxide-doped copper cadmium titanate giant dielectric ceramic material with high breakdown field strength and energy storage density.

Embodiment 3

[0026] In this example, to CdCu 3 Ti 4 o 12 4.0% by mass of silicon dioxide powder was added to the ceramic powder, and the other steps were the same as in Example 1 to obtain a silicon dioxide-doped copper cadmium titanate giant dielectric ceramic material with high breakdown field strength and energy storage density.

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Abstract

The invention discloses a high breakdown field strength and energy storage density silicon dioxide doped cadmium copper titanate giant dielectric ceramic material and a preparation method. The ceramic material is prepared from materials shown in CdCu3Ti4O12-x wt%SiO2, wherein x ranges from 1.0 to 4.0, Cd(NO3)2.4H2O, Cu(NO3)2.3H2O and Ti(C4H9O)4 serve as raw materials, glacial acetic acid serves as a chelating agent, precursor powder is prepared through a sol-gel method firstly, the precursor powder is calcined at low temperature, CdCu3Ti4O12 ceramic powder which can be mixed on the molecular level and has good uniformity and high activity is obtained, then silicon dioxide powder is added into the ceramic powder, and the silicon dioxide doped cadmium copper titanate giant dielectric ceramic material can be obtained after ball milling, prilling, tableting, glue discharging and sintering. The ceramic material is simple in preparation method, low in reaction temperature, good in repeatability, high in yield and excellent in dielectric performance. The breakdown field strength can reach up to 895-2,353 V / cm, the energy storage density can reach up to 0.712-1.77 mJ / cm<3>, and wide application prospects are achieved.

Description

technical field [0001] The invention belongs to the technical field of electronic ceramic materials, and in particular relates to a silicon dioxide doped copper cadmium titanate giant dielectric ceramic material with high breakdown field strength and energy storage density and a preparation method thereof. Background technique [0002] Energy and the environment are one of the biggest problems and challenges facing the world today. Therefore, how to effectively store energy, reduce energy loss, and reduce environmental pressure has been a research hotspot for scientists for more than ten years. Energy storage materials and their technologies are a new type of energy-saving means, and they are increasingly playing an important role in daily life and industrial production. However, most of the renewable energy must first be converted into electrical energy. Although electrical energy can be transported to where it is needed over long distances via cables, efficient electrical ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01G4/12C04B35/462C04B35/622
CPCC04B35/462C04B35/622C04B2235/3232C04B2235/3241C04B2235/3281C04B2235/3418C04B2235/602C04B2235/656C04B2235/6562C04B2235/6567H01G4/1218H01G4/129H01G4/30
Inventor 晁小练彭战辉杨祖培梁朋飞
Owner SHAANXI NORMAL UNIV
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