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Crusting transient thermal impedance measuring method used for high power IGBT

A measurement method and transient heat technology, applied in the direction of measuring electricity, measuring devices, measuring electrical variables, etc., can solve the problems of economy, energy saving, waste, etc., achieve high accuracy, reduce costs, and ensure accuracy Effect

Inactive Publication Date: 2017-09-22
XI AN JIAOTONG UNIV
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  • Abstract
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Problems solved by technology

[0003] Selecting IGBTs based on empirical values ​​can leave a large margin for the capacity of IGBTs, and can ensure the stable and safe operation of IGBTs during the operation of the device, but it causes a certain degree of waste, which is not advisable in terms of economy and energy saving of

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  • Crusting transient thermal impedance measuring method used for high power IGBT
  • Crusting transient thermal impedance measuring method used for high power IGBT
  • Crusting transient thermal impedance measuring method used for high power IGBT

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Embodiment Construction

[0037] Below in conjunction with accompanying drawing and embodiment the present invention will be described in further detail:

[0038] The embodiment of the present invention is divided into four steps, as figure 1 As shown, the specific implementation steps are as follows:

[0039] Within a certain temperature range (generally 20°C-150°C), there is an approximately linear relationship between certain parameters of the IGBT and the junction temperature. Among them, the saturation voltage drop Vce of the IGBT under the condition of small current conduction is usually used as a temperature-sensitive parameter to indirectly measure the junction temperature. The present invention has utilized this relation, therefore at first needs to obtain the temperature-sensitive parameter (junction temperature Tj-saturation pressure drop Vce) calibration curve, and its specific steps are:

[0040] 1. Press the high-power IGBT to be tested figure 2 The circuit shown is connected well, an...

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Abstract

The invention discloses a crusting transient thermal impedance measuring method used for a high power IGBT. The method comprises the steps that an IGBT thermo-sensitive parameter calibration curve is acquired; junction temperature and case temperature cooling curves in an IGBT cooling process are acquired; and cooling curve deviation correcting and cooling curve fitting are carried out to acquire transient crusting thermal impedance parameters. According to the invention, a thermo-sensitive parameter method is used to measure the junction temperature cooling curve in the high power IGBT cooling process, and at the same time a thermocouple method is used to acquire the IGBT case temperature cooling curve; the IGBT transient thermal impedance parameters are acquired through curve fitting; and the method has the advantages of easy operation and wide use range, can directly and accurately acquire the transient thermal impedance parameters in the IGBT, and can be used to predict the junction temperature change trend in the actual operation of the high power IGBT for further thermal stability evaluation.

Description

technical field [0001] The invention belongs to the technical field of thermal transient process analysis of semiconductor devices, and in particular relates to a measurement method for the transient thermal impedance of a high-power IGBT junction case, which is used to predict the junction temperature variation trend of a high-power IGBT in actual operation, thereby further performing thermal analysis. Stability assessment. Background technique [0002] In recent years, high-power power electronic devices have been more and more widely used in power grids (such as MMC, STATCOM, etc.), and their voltage levels and power levels are also getting higher and higher. Therefore, the requirements for the voltage level and capacity of the IGBT used in such power electronic devices are also getting higher and higher. At present, such devices mainly rely on empirical values ​​when selecting IGBT models. The main purpose is to avoid IGBT overvoltage or overheating failure, so the capa...

Claims

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Application Information

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IPC IPC(8): G01R31/26
CPCG01R31/2619
Inventor 王跃王璋尹诗媛周晖尹太元段国朝
Owner XI AN JIAOTONG UNIV
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