Al technical title is built by PatSnap Al team. It summarizes the technical point description of the patent document.
A high-end storage, built-in technology, applied in the field of server storage, can solve the problems of not supporting NVME disk, high implementation cost, large server space, etc., and achieve the effect of reducing the complexity of chassis wiring, saving PCIE overhead, and reducing system cost
Inactive Publication Date: 2017-09-29
ZHENGZHOU YUNHAI INFORMATION TECH CO LTD
View PDF5 Cites 9 Cited by
Summary
Abstract
Description
Claims
Application Information
AI Technical Summary
This helps you quickly interpret patents by identifying the three key elements:
Problems solved by technology
Method used
Benefits of technology
Problems solved by technology
This solution occupies many PCIE slots (at least 2) on the motherboard, takes up a large amount of space on the server, and has high implementation costs. It also does not support the Raid (Redundant Array of Independent Disks) function of the NVME disk, and cannot Realize data redundancy protection of NVME disk, there are many disadvantages
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more
Image
Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
Click on the blue label to locate the original text in one second.
Reading with bidirectional positioning of images and text.
Smart Image
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0032] In order to clearly illustrate the technical characteristics of this solution, the present invention will be described in detail below through specific implementations and in conjunction with the accompanying drawings. The following disclosure provides many different embodiments or examples for implementing different structures of the present invention. In order to simplify the disclosure of the present invention, the components and settings of specific examples are described below. In addition, the present invention may repeat reference numbers and / or letters in different examples. This repetition is for the purpose of simplification and clarity, and does not in itself indicate the relationship between the various embodiments and / or settings discussed. It should be noted that the components illustrated in the drawings are not necessarily drawn to scale. The present invention omits descriptions of well-known components and processing techniques and processes to avoid u...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more
PUM
Login to view more
Abstract
The invention discloses a built-in high-end storage card supporting Tri-Mode. The built-in high-end storage card comprises a PCB, a Raid controller, a DDR4 cache array, a PCIE host interface, a built-in connector interface, a Fimware storage unit, a data protection and super-capacitor interface unit, a clock unit and a power supply unit, wherein the Raid controller, the DDR4 cache array, the PCIE host interface, the built-in connector interface, the Fimware storage unit, the data protection and super-capacitor interface unit, the clock unit and the power supply unit are arranged on the PCB. The Raid controller is connected with the DDR4 cache array, the PCIE host interface, the built-in connector interface, the Fimware storage unit, the data protection and super-capacitor interface unit, the clock unit and the power supply unit separately, the built-in connector interface is connected with a built-in connector, and the built-in connector is connected with disks. According to the built-in high-end storage card, hybrid deployment of SAS / SATA / NVME disks is achieved through one PCIE board card, so that the mainboard PCIE expense is reduced, the case wiring complexity is lowered, and the system cost is reduced.
Description
Technical field [0001] The present invention relates to a built-in high-end memory card supporting Tri-Mode, specifically an 8-port built-in memory card supporting Tri-Mode (three-mode, SAS / SATA / PCIE or SAS / SATA / NVME). It supports high-end Raid-level Raid0 / 1 / 5 / 6 / 10 / 50 / 60, and has a variety of DDR cache specifications from 1GB-8GB, which belongs to the field of server storage technology. Background technique [0002] With the development of cloud computing technology and big data applications, the market has more and more integrated functional requirements for servers. It requires both traditional SAS and SATA mechanical disks to increase the capacity, and also requires the use of SSDs, especially NVME SSDs, to achieve high-performance and low-latency applications. Therefore, the market demand for hybrid deployment of SAS / SATA / NVME disk server systems is becoming more and more extensive. [0003] To achieve the traditional solution of hybrid deployment of SAS / SATA / NVME disks in se...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more
Application Information
Patent Timeline
Application Date:The date an application was filed.
Publication Date:The date a patent or application was officially published.
First Publication Date:The earliest publication date of a patent with the same application number.
Issue Date:Publication date of the patent grant document.
PCT Entry Date:The Entry date of PCT National Phase.
Estimated Expiry Date:The statutory expiry date of a patent right according to the Patent Law, and it is the longest term of protection that the patent right can achieve without the termination of the patent right due to other reasons(Term extension factor has been taken into account ).
Invalid Date:Actual expiry date is based on effective date or publication date of legal transaction data of invalid patent.