Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Built-in high-end storage card supporting Tri-Mode

A high-end storage, built-in technology, applied in the field of server storage, can solve the problems of not supporting NVME disk, high implementation cost, large server space, etc., and achieve the effect of reducing the complexity of chassis wiring, saving PCIE overhead, and reducing system cost

Inactive Publication Date: 2017-09-29
ZHENGZHOU YUNHAI INFORMATION TECH CO LTD
View PDF5 Cites 9 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This solution occupies many PCIE slots (at least 2) on the motherboard, takes up a large amount of space on the server, and has high implementation costs. It also does not support the Raid (Redundant Array of Independent Disks) function of the NVME disk, and cannot Realize data redundancy protection of NVME disk, there are many disadvantages

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Built-in high-end storage card supporting Tri-Mode
  • Built-in high-end storage card supporting Tri-Mode
  • Built-in high-end storage card supporting Tri-Mode

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0032] In order to clearly illustrate the technical characteristics of this solution, the present invention will be described in detail below through specific implementations and in conjunction with the accompanying drawings. The following disclosure provides many different embodiments or examples for implementing different structures of the present invention. In order to simplify the disclosure of the present invention, the components and settings of specific examples are described below. In addition, the present invention may repeat reference numbers and / or letters in different examples. This repetition is for the purpose of simplification and clarity, and does not in itself indicate the relationship between the various embodiments and / or settings discussed. It should be noted that the components illustrated in the drawings are not necessarily drawn to scale. The present invention omits descriptions of well-known components and processing techniques and processes to avoid u...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a built-in high-end storage card supporting Tri-Mode. The built-in high-end storage card comprises a PCB, a Raid controller, a DDR4 cache array, a PCIE host interface, a built-in connector interface, a Fimware storage unit, a data protection and super-capacitor interface unit, a clock unit and a power supply unit, wherein the Raid controller, the DDR4 cache array, the PCIE host interface, the built-in connector interface, the Fimware storage unit, the data protection and super-capacitor interface unit, the clock unit and the power supply unit are arranged on the PCB. The Raid controller is connected with the DDR4 cache array, the PCIE host interface, the built-in connector interface, the Fimware storage unit, the data protection and super-capacitor interface unit, the clock unit and the power supply unit separately, the built-in connector interface is connected with a built-in connector, and the built-in connector is connected with disks. According to the built-in high-end storage card, hybrid deployment of SAS / SATA / NVME disks is achieved through one PCIE board card, so that the mainboard PCIE expense is reduced, the case wiring complexity is lowered, and the system cost is reduced.

Description

Technical field [0001] The present invention relates to a built-in high-end memory card supporting Tri-Mode, specifically an 8-port built-in memory card supporting Tri-Mode (three-mode, SAS / SATA / PCIE or SAS / SATA / NVME). It supports high-end Raid-level Raid0 / 1 / 5 / 6 / 10 / 50 / 60, and has a variety of DDR cache specifications from 1GB-8GB, which belongs to the field of server storage technology. Background technique [0002] With the development of cloud computing technology and big data applications, the market has more and more integrated functional requirements for servers. It requires both traditional SAS and SATA mechanical disks to increase the capacity, and also requires the use of SSDs, especially NVME SSDs, to achieve high-performance and low-latency applications. Therefore, the market demand for hybrid deployment of SAS / SATA / NVME disk server systems is becoming more and more extensive. [0003] To achieve the traditional solution of hybrid deployment of SAS / SATA / NVME disks in se...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G06F13/16G06F13/42G06F11/14
CPCG06F13/1668G06F11/1441G06F13/4282
Inventor 杨明涛
Owner ZHENGZHOU YUNHAI INFORMATION TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products